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000047320 0247_ $$2DOI$$a10.1016/j.electacta.2005.04.073
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000047320 084__ $$2WoS$$aElectrochemistry
000047320 1001_ $$0P:(DE-HGF)0$$aSchultze, J. W.$$b0
000047320 245__ $$aPrinciples of Electrochemical Nanotechnology and Their Application for Materials and Systems
000047320 260__ $$aNew York, NY [u.a.]$$bElsevier$$c2005
000047320 300__ $$a775 - 786
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000047320 440_0 $$01776$$aElectrochimica Acta$$v51$$x0013-4686
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000047320 520__ $$aElectrochemical nano technology (ENT) is a promising field growing in strong connection with electrochemical microsystem technology (EMT). Some principles of EMT like characterization and localization of reactions can be transferred to ENT.Some other principles like mechanical motion, quantum effects or microfluidics differ and have to be separately discussed. Properties of the nanocell, the smallest electrochemical two-electrode cell, are discussed as example of a special tool of ENT. It is useful for the preparation of nano-scaled metal-insulator-electrolyte-structures (MIE-structures). The role of the EMT number for field-induced localizations is discussed with the Si/SiO2-system as an example. Lateral metal-insulator-metal-structures (MIM-structures) are prepared in the nanocell with the system Nb/Nb2O5/H2O as an example. (C) 2005 Published by Elsevier Ltd.
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000047320 65320 $$2Author$$aelectrochemical nanotechnology
000047320 65320 $$2Author$$aelectrochemical microsystem technology
000047320 65320 $$2Author$$aMIE-structures
000047320 65320 $$2Author$$aMIM-structures
000047320 7001_ $$0P:(DE-HGF)0$$aHeidelberg, A.$$b1
000047320 7001_ $$0P:(DE-HGF)0$$aRosenkranz, C.$$b2
000047320 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, T.$$b3$$uFZJ
000047320 7001_ $$0P:(DE-Juel1)VDB13645$$aStaikov, G.$$b4$$uFZJ
000047320 773__ $$0PERI:(DE-600)1483548-4$$a10.1016/j.electacta.2005.04.073$$gVol. 51, p. 775 - 786$$p775 - 786$$q51<775 - 786$$tElectrochimica acta$$v51$$x0013-4686$$y2005
000047320 8567_ $$uhttp://dx.doi.org/10.1016/j.electacta.2005.04.073
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000047320 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x1
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