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000047423 0247_ $$2DOI$$a10.1007/s10971-005-6379-6
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000047423 084__ $$2WoS$$aMaterials Science, Ceramics
000047423 1001_ $$0P:(DE-HGF)0$$aHalder, S.$$b0
000047423 245__ $$aCrystallization temperature limit of (Ba,Sr)TiO3 thin films prepared by a non oxocarbonate phase forming CSD route
000047423 260__ $$aDordrecht [u.a.]$$bSpringer Science + Business Media B.V$$c2005
000047423 300__ $$a299 - 306
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000047423 440_0 $$014361$$aJournal of Sol-Gel Science and Technology$$v33$$x0928-0707$$y3
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000047423 520__ $$aAnew chemical solution deposition (CSD) route for the fabrication of Ba0.7Sr0.3TiO3 (BST) thin films has been developed which completely prevents the formation of an intermediate oxo-carbonate phase. The latter has been reported previously by several authors to be responsible for increased crystallization temperatures. Barium and strontium diaminoethoxides were synthesized starting from pure barium and strontium metal and aminoethanol. These alkoxides were found to be readily soluble in a wide range of solvents and thus were excellent candidates for the CSD process. To prepare a stable precursor solution the aminoalkoxides were dissolved in 2-butoxyethanol and then used for the deposition of BST thin films. We conclude that the minimum crystallization temperature of 600 degrees C to be independent of the formation of the oxo-carbonate phase. DTA-TGA were performed on the precursors and their solutions to study their decomposition behaviour. All films annealed at different temperatures were physically characterized by XRD, IR, and SEM. The films prepared by this route at 650 degrees C were found to have high dielectric constant and the leakage currents were comparable to BST films prepared by normal carboxylate based routes at 750 degrees C.
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000047423 65320 $$2Author$$abarium strontium titanate
000047423 65320 $$2Author$$athin films
000047423 65320 $$2Author$$aCSD
000047423 65320 $$2Author$$alow temperature processing
000047423 7001_ $$0P:(DE-HGF)0$$aSchneller, T.$$b1
000047423 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b2$$uFZJ
000047423 773__ $$0PERI:(DE-600)1472726-2$$a10.1007/s10971-005-6379-6$$gVol. 33, p. 299 - 306$$p299 - 306$$q33<299 - 306$$tJournal of sol gel science and technology$$v33$$x0928-0707$$y2005
000047423 8567_ $$uhttp://dx.doi.org/10.1007/s10971-005-6379-6
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000047423 9141_ $$y2005
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000047423 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x0
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