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@ARTICLE{Halder:47423,
      author       = {Halder, S. and Schneller, T. and Waser, R.},
      title        = {{C}rystallization temperature limit of ({B}a,{S}r){T}i{O}3
                      thin films prepared by a non oxocarbonate phase forming
                      {CSD} route},
      journal      = {Journal of sol gel science and technology},
      volume       = {33},
      issn         = {0928-0707},
      address      = {Dordrecht [u.a.]},
      publisher    = {Springer Science + Business Media B.V},
      reportid     = {PreJuSER-47423},
      pages        = {299 - 306},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Anew chemical solution deposition (CSD) route for the
                      fabrication of Ba0.7Sr0.3TiO3 (BST) thin films has been
                      developed which completely prevents the formation of an
                      intermediate oxo-carbonate phase. The latter has been
                      reported previously by several authors to be responsible for
                      increased crystallization temperatures. Barium and strontium
                      diaminoethoxides were synthesized starting from pure barium
                      and strontium metal and aminoethanol. These alkoxides were
                      found to be readily soluble in a wide range of solvents and
                      thus were excellent candidates for the CSD process. To
                      prepare a stable precursor solution the aminoalkoxides were
                      dissolved in 2-butoxyethanol and then used for the
                      deposition of BST thin films. We conclude that the minimum
                      crystallization temperature of 600 degrees C to be
                      independent of the formation of the oxo-carbonate phase.
                      DTA-TGA were performed on the precursors and their solutions
                      to study their decomposition behaviour. All films annealed
                      at different temperatures were physically characterized by
                      XRD, IR, and SEM. The films prepared by this route at 650
                      degrees C were found to have high dielectric constant and
                      the leakage currents were comparable to BST films prepared
                      by normal carboxylate based routes at 750 degrees C.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {600},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK242},
      shelfmark    = {Materials Science, Ceramics},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000228212900006},
      doi          = {10.1007/s10971-005-6379-6},
      url          = {https://juser.fz-juelich.de/record/47423},
}