Hauptseite > Publikationsdatenbank > Crystallization temperature limit of (Ba,Sr)TiO3 thin films prepared by a non oxocarbonate phase forming CSD route > print

001     47423
005     20180210133838.0
024 7 _ |2 DOI
|a 10.1007/s10971-005-6379-6
024 7 _ |2 WOS
|a WOS:000228212900006
037 _ _ |a PreJuSER-47423
041 _ _ |a eng
082 _ _ |a 600
084 _ _ |2 WoS
|a Materials Science, Ceramics
100 1 _ |a Halder, S.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Crystallization temperature limit of (Ba,Sr)TiO3 thin films prepared by a non oxocarbonate phase forming CSD route
260 _ _ |a Dordrecht [u.a.]
|b Springer Science + Business Media B.V
|c 2005
300 _ _ |a 299 - 306
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Journal of Sol-Gel Science and Technology
|x 0928-0707
|0 14361
|y 3
|v 33
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Anew chemical solution deposition (CSD) route for the fabrication of Ba0.7Sr0.3TiO3 (BST) thin films has been developed which completely prevents the formation of an intermediate oxo-carbonate phase. The latter has been reported previously by several authors to be responsible for increased crystallization temperatures. Barium and strontium diaminoethoxides were synthesized starting from pure barium and strontium metal and aminoethanol. These alkoxides were found to be readily soluble in a wide range of solvents and thus were excellent candidates for the CSD process. To prepare a stable precursor solution the aminoalkoxides were dissolved in 2-butoxyethanol and then used for the deposition of BST thin films. We conclude that the minimum crystallization temperature of 600 degrees C to be independent of the formation of the oxo-carbonate phase. DTA-TGA were performed on the precursors and their solutions to study their decomposition behaviour. All films annealed at different temperatures were physically characterized by XRD, IR, and SEM. The films prepared by this route at 650 degrees C were found to have high dielectric constant and the leakage currents were comparable to BST films prepared by normal carboxylate based routes at 750 degrees C.
536 _ _ |a Kondensierte Materie
|c M02
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK242
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a barium strontium titanate
653 2 0 |2 Author
|a thin films
653 2 0 |2 Author
|a CSD
653 2 0 |2 Author
|a low temperature processing
700 1 _ |a Schneller, T.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Waser, R.
|b 2
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |a 10.1007/s10971-005-6379-6
|g Vol. 33, p. 299 - 306
|p 299 - 306
|q 33<299 - 306
|0 PERI:(DE-600)1472726-2
|t Journal of sol gel science and technology
|v 33
|y 2005
|x 0928-0707
856 7 _ |u http://dx.doi.org/10.1007/s10971-005-6379-6
909 C O |o oai:juser.fz-juelich.de:47423
|p VDB
913 1 _ |k M02
|v Kondensierte Materie
|l Kondensierte Materie
|b Materie
|0 G:(DE-Juel1)FUEK242
|x 0
914 1 _ |y 2005
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k IFF-IEM
|l Elektronische Materialien
|d 31.12.2006
|g IFF
|0 I:(DE-Juel1)VDB321
|x 0
920 1 _ |k CNI
|l Center of Nanoelectronic Systems for Information Technology
|d 14.09.2008
|g CNI
|z 381
|0 I:(DE-Juel1)VDB381
|x 1
970 _ _ |a VDB:(DE-Juel1)74785
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-Juel1)VDB381
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106
981 _ _ |a I:(DE-Juel1)VDB381

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