TY  - JOUR
AU  - Schorn, P. J.
AU  - Schneller, T.
AU  - Böttger, U.
AU  - Waser, R.
TI  - Characterization of chemical solution deposition-derived lead hafnate titanate thin films
JO  - Journal of the American Ceramic Society
VL  - 88
SN  - 0002-7820
CY  - Oxford [u.a.]
PB  - Wiley-Blackwell
M1  - PreJuSER-47425
SP  - 1312 - 1314
PY  - 2005
N1  - Record converted from VDB: 12.11.2012
AB  - In this paper, lead hafnate titanate (PHT) was derived by chemical solution deposition (CSD) and characterized as a thin film material. The thin films were tested for the usage as a ferroelectric thin film in view of Ferroelectric Random Access Memory (FRAM) devices and compared with an equivalent lead zirconate titanate (PZT) thin film, which was prepared under the same conditions. After determining the thickness and the morphology of the PHT films, electronic measurements were performed to investigate this material as a promising candidate in view of FRAM applications due to failure mechanisms like fatigue and imprint.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000229066400037
DO  - DOI:10.1111/j.1551-2916.2004.00177.x
UR  - https://juser.fz-juelich.de/record/47425
ER  -