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@ARTICLE{Schorn:47425,
author = {Schorn, P. J. and Schneller, T. and Böttger, U. and Waser,
R.},
title = {{C}haracterization of chemical solution deposition-derived
lead hafnate titanate thin films},
journal = {Journal of the American Ceramic Society},
volume = {88},
issn = {0002-7820},
address = {Oxford [u.a.]},
publisher = {Wiley-Blackwell},
reportid = {PreJuSER-47425},
pages = {1312 - 1314},
year = {2005},
note = {Record converted from VDB: 12.11.2012},
abstract = {In this paper, lead hafnate titanate (PHT) was derived by
chemical solution deposition (CSD) and characterized as a
thin film material. The thin films were tested for the usage
as a ferroelectric thin film in view of Ferroelectric Random
Access Memory (FRAM) devices and compared with an equivalent
lead zirconate titanate (PZT) thin film, which was prepared
under the same conditions. After determining the thickness
and the morphology of the PHT films, electronic measurements
were performed to investigate this material as a promising
candidate in view of FRAM applications due to failure
mechanisms like fatigue and imprint.},
cin = {IFF-IEM / CNI},
ddc = {660},
cid = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Materials Science, Ceramics},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000229066400037},
doi = {10.1111/j.1551-2916.2004.00177.x},
url = {https://juser.fz-juelich.de/record/47425},
}