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000047542 041__ $$aeng
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000047542 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000047542 084__ $$2WoS$$aMaterials Science, Coatings & Films
000047542 084__ $$2WoS$$aPhysics, Applied
000047542 084__ $$2WoS$$aPhysics, Condensed Matter
000047542 1001_ $$0P:(DE-Juel1)VDB34017$$aHan, Y.$$b0$$uFZJ
000047542 245__ $$aSurface activation of thin silicon oxides by wet cleaning and silanization
000047542 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2006
000047542 300__ $$a175 - 180
000047542 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
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000047542 520__ $$aSilanization protocols for glass slides and silicon oxide substrates usually include acid rinsing steps to activate the surfaces prior to silanization. In our group, field-effect transistor devices and electrolyte-insulator-semiconductor structures are used to electronically record signals from cells or to detect biomolecular interactions at the solid-liquid interface. A miniaturized, high sensitive, field-effect-based semiconductor device should expose at its input stage just a thin oxide (< 10 nm) to the electrolyte solution. Therefore, silanization protocols are needed, which do not alter the thin oxide layers in terms of topology changes or thickness loss. In this article we evaluated different protocols for wet cleaning and activation of thin silicon oxides. The efficiency of the cleaning methods was verified with Contact Angle Measurements, Atomic Force Microscopy, and Fourier-Transform Infrared Spectroscopy. Furthermore, X-ray Photoelectron Spectroscopy was used to characterize the oxides after the cleaning and silanization procedures. (3-aminopropyl)triethoxysilane was used to functionalize the oxide surfaces for further attachment of biological molecules (e.g. proteins, DNA). Thicknesses and uniformity of the silane coatings were evaluated by Imaging Ellipsometry. (c) 2005 Elsevier B.V. All rights reserved.
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000047542 650_7 $$2WoSType$$aJ
000047542 65320 $$2Author$$asilicon oxide
000047542 65320 $$2Author$$aetching
000047542 65320 $$2Author$$asurface toughness
000047542 65320 $$2Author$$asilane
000047542 7001_ $$0P:(DE-Juel1)128707$$aMayer, D.$$b1$$uFZJ
000047542 7001_ $$0P:(DE-Juel1)128713$$aOffenhäusser, A.$$b2$$uFZJ
000047542 7001_ $$0P:(DE-Juel1)VDB5728$$aIngebrandt, S.$$b3$$uFZJ
000047542 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/j.tsf.2005.11.048$$gVol. 510, p. 175 - 180$$p175 - 180$$q510<175 - 180$$tThin solid films$$v510$$x0040-6090$$y2006
000047542 8567_ $$uhttp://dx.doi.org/10.1016/j.tsf.2005.11.048
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000047542 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000047542 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
000047542 9201_ $$0I:(DE-Juel1)VDB42$$d31.12.2006$$gISG$$kISG-2$$lInstitut für Bio- und Chemosensoren$$x0
000047542 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x2
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