001     47542
005     20190625110824.0
024 7 _ |2 DOI
|a 10.1016/j.tsf.2005.11.048
024 7 _ |2 WOS
|a WOS:000238011200029
024 7 _ |a altmetric:21814233
|2 altmetric
037 _ _ |a PreJuSER-47542
041 _ _ |a eng
082 _ _ |a 070
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Materials Science, Coatings & Films
084 _ _ |2 WoS
|a Physics, Applied
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Han, Y.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB34017
245 _ _ |a Surface activation of thin silicon oxides by wet cleaning and silanization
260 _ _ |a Amsterdam [u.a.]
|b Elsevier
|c 2006
300 _ _ |a 175 - 180
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Thin Solid Films
|x 0040-6090
|0 5762
|v 510
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Silanization protocols for glass slides and silicon oxide substrates usually include acid rinsing steps to activate the surfaces prior to silanization. In our group, field-effect transistor devices and electrolyte-insulator-semiconductor structures are used to electronically record signals from cells or to detect biomolecular interactions at the solid-liquid interface. A miniaturized, high sensitive, field-effect-based semiconductor device should expose at its input stage just a thin oxide (< 10 nm) to the electrolyte solution. Therefore, silanization protocols are needed, which do not alter the thin oxide layers in terms of topology changes or thickness loss. In this article we evaluated different protocols for wet cleaning and activation of thin silicon oxides. The efficiency of the cleaning methods was verified with Contact Angle Measurements, Atomic Force Microscopy, and Fourier-Transform Infrared Spectroscopy. Furthermore, X-ray Photoelectron Spectroscopy was used to characterize the oxides after the cleaning and silanization procedures. (3-aminopropyl)triethoxysilane was used to functionalize the oxide surfaces for further attachment of biological molecules (e.g. proteins, DNA). Thicknesses and uniformity of the silane coatings were evaluated by Imaging Ellipsometry. (c) 2005 Elsevier B.V. All rights reserved.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
|c P42
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a silicon oxide
653 2 0 |2 Author
|a etching
653 2 0 |2 Author
|a surface toughness
653 2 0 |2 Author
|a silane
700 1 _ |a Mayer, D.
|b 1
|u FZJ
|0 P:(DE-Juel1)128707
700 1 _ |a Offenhäusser, A.
|b 2
|u FZJ
|0 P:(DE-Juel1)128713
700 1 _ |a Ingebrandt, S.
|b 3
|u FZJ
|0 P:(DE-Juel1)VDB5728
773 _ _ |a 10.1016/j.tsf.2005.11.048
|g Vol. 510, p. 175 - 180
|p 175 - 180
|q 510<175 - 180
|0 PERI:(DE-600)1482896-0
|t Thin solid films
|v 510
|y 2006
|x 0040-6090
856 7 _ |u http://dx.doi.org/10.1016/j.tsf.2005.11.048
909 C O |o oai:juser.fz-juelich.de:47542
|p VDB
913 1 _ |k P42
|v Grundlagen für zukünftige Informationstechnologien
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|b Schlüsseltechnologien
|0 G:(DE-Juel1)FUEK412
|x 0
914 1 _ |y 2006
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |d 14.09.2008
|g CNI
|k CNI
|l Center of Nanoelectronic Systems for Information Technology
|0 I:(DE-Juel1)VDB381
|x 1
|z 381
920 1 _ |d 31.12.2006
|g ISG
|k ISG-2
|l Institut für Bio- und Chemosensoren
|0 I:(DE-Juel1)VDB42
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
|g JARA
|x 2
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980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)IBN-2-20090406
981 _ _ |a I:(DE-Juel1)VDB881


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