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000047589 084__ $$2WoS$$aElectrochemistry
000047589 1001_ $$0P:(DE-HGF)0$$aAbou-Hamad, I.$$b0
000047589 245__ $$aCl-Electrosorption on Ag(100) - Lateral Interactions and Electrosorption Valency from Monte Carlo Simulations and Experiments
000047589 260__ $$aNew York, NY [u.a.]$$bElsevier$$c2005
000047589 300__ $$a5518 - 5525
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000047589 440_0 $$01776$$aElectrochimica Acta$$v50$$x0013-4686$$y28
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000047589 520__ $$aWe present Monte Carlo simulations using an equilibrium lattice-gas model for the electrosorption of Cl on Ag(100) single-crystal surfaces. Fitting the simulated isotherms to chronocoulometry experiments, we extract parameters such as the electrosorption valency gamma and the next-nearest-neighbor lateral interaction energy phi(nnn). Both coverage-dependent and coverage-independent gamma were previously studied, assuming a constant phi(nnn) [I. Abou Hamad, Th. Wandlowski, G. Brown, P.A. Rikvold, J. Electroanal. Chem. 554-555 (2003) 211]. Here, a self-consistent, entirely electrostatic picture of the lateral interactions with a coverage-dependent phi(nnn) is developed, and a relationship between phi(nnn) and gamma is investigated for Cl on Ag(1 0 0). (C) 2005 Elsevier Ltd. All rights reserved.
000047589 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik$$cI01$$x0
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000047589 65320 $$2Author$$achlorine electrosorption
000047589 65320 $$2Author$$alateral interactions
000047589 65320 $$2Author$$aelectrosorption valency
000047589 65320 $$2Author$$achronocoulornetry
000047589 65320 $$2Author$$acontinuous phase transition
000047589 65320 $$2Author$$aMonte Carlo simulation
000047589 7001_ $$0P:(DE-HGF)0$$aMitchel, S. J.$$b1
000047589 7001_ $$0P:(DE-Juel1)VDB9859$$aWandlowski, Th.$$b2$$uFZJ
000047589 7001_ $$0P:(DE-HGF)0$$aRikvold, P. A.$$b3
000047589 7001_ $$0P:(DE-HGF)0$$aBrown, G.$$b4
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000047589 8567_ $$uhttp://dx.doi.org/10.1016/j.electacta.2005.03.057
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000047589 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000047589 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
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