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@ARTICLE{Regnery:47592,
      author       = {Regnery, S. and Ding, Y. and Jia, C. L. and Szot, K. and
                      Thomas, R. and Waser, R.},
      title        = {{M}etal organic chemical vapor deposition of
                      ({B}a,{S}r){T}i{O}3: {N}ucleation and growth on {P}t-(111)},
      journal      = {Journal of applied physics},
      volume       = {98},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-47592},
      pages        = {084904-1 - 084904-12},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Thin films of the (BaxSr1-x)TiO3 (BST) solid solution
                      series were grown by metal-organic chemical-vapor deposition
                      (MOCVD) on platinized silicon wafers with emphasis to
                      (Ba0.7Sr0.3)TiO3 and SrTiO3. The nucleation behavior and the
                      size of the stable nuclei were investigated by different
                      scanning probe microscope techniques including local
                      conductivity scanning. The characteristic differences were
                      observed for different deposition temperatures, i.e., a
                      homogeneous nucleation of small BST grains on the larger Pt
                      grains at 565 degrees C and a dominating grain-boundary
                      nucleation at 655 degrees C. X-ray photoelectron
                      spectroscopy indicates a stoichiometric composition from the
                      beginning. The microstructural evolution was investigated by
                      high-resolution transmission electron microscopy and
                      revealed randomly oriented grains (typical in-plane size
                      10-20 nm) with a high density of twins at 565 degrees C and
                      (100)-oriented defect-free grains of slightly increased size
                      at 655 degrees C. This remarkably stable (100) texture seems
                      specific for MOCVD as it is not observed for other
                      deposition methods. The grain structure and surface
                      morphology and their dependence on film stoichiometry
                      (group-II/Ti ratio) are investigated. The relation between
                      the structural and the electrical properties, capacitance,
                      and leakage current, is finally discussed. (c) 2005 American
                      Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI / IFF-IMF},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381 /
                      I:(DE-Juel1)VDB37},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000232937500094},
      doi          = {10.1063/1.2084312},
      url          = {https://juser.fz-juelich.de/record/47592},
}