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| 001 | 47592 | ||
| 005 | 20240610120501.0 | ||
| 017 | _ | _ | |a This version is available at the following Publisher URL: http://jap.aip.org |
| 024 | 7 | _ | |a 10.1063/1.2084312 |2 DOI |
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| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Regnery, S. |b 0 |u FZJ |0 P:(DE-Juel1)VDB3071 |
| 245 | _ | _ | |a Metal organic chemical vapor deposition of (Ba,Sr)TiO3: Nucleation and growth on Pt-(111) |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2005 |
| 300 | _ | _ | |a 084904-1 - 084904-12 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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| 440 | _ | 0 | |a Journal of Applied Physics |x 0021-8979 |0 3051 |v 98 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Thin films of the (BaxSr1-x)TiO3 (BST) solid solution series were grown by metal-organic chemical-vapor deposition (MOCVD) on platinized silicon wafers with emphasis to (Ba0.7Sr0.3)TiO3 and SrTiO3. The nucleation behavior and the size of the stable nuclei were investigated by different scanning probe microscope techniques including local conductivity scanning. The characteristic differences were observed for different deposition temperatures, i.e., a homogeneous nucleation of small BST grains on the larger Pt grains at 565 degrees C and a dominating grain-boundary nucleation at 655 degrees C. X-ray photoelectron spectroscopy indicates a stoichiometric composition from the beginning. The microstructural evolution was investigated by high-resolution transmission electron microscopy and revealed randomly oriented grains (typical in-plane size 10-20 nm) with a high density of twins at 565 degrees C and (100)-oriented defect-free grains of slightly increased size at 655 degrees C. This remarkably stable (100) texture seems specific for MOCVD as it is not observed for other deposition methods. The grain structure and surface morphology and their dependence on film stoichiometry (group-II/Ti ratio) are investigated. The relation between the structural and the electrical properties, capacitance, and leakage current, is finally discussed. (c) 2005 American Institute of Physics. |
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| 700 | 1 | _ | |a Jia, C. L. |b 2 |u FZJ |0 P:(DE-Juel1)VDB5020 |
| 700 | 1 | _ | |a Szot, K. |b 3 |u FZJ |0 P:(DE-Juel1)VDB2799 |
| 700 | 1 | _ | |a Thomas, R. |b 4 |u FZJ |0 P:(DE-Juel1)VDB35139 |
| 700 | 1 | _ | |a Waser, R. |b 5 |u FZJ |0 P:(DE-Juel1)131022 |
| 773 | _ | _ | |a 10.1063/1.2084312 |g Vol. 98, p. 084904-1 - 084904-12 |p 084904-1 - 084904-12 |q 98<084904-1 - 084904-12 |0 PERI:(DE-600)1476463-5 |t Journal of applied physics |v 98 |y 2005 |x 0021-8979 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.2084312 |u http://hdl.handle.net/2128/1095 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/47592/files/75094.pdf |y OpenAccess |
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