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@ARTICLE{Filimonov:47656,
      author       = {Filimonov, S. N. and Hervieu, Y. Y.},
      title        = {{S}tep {P}ermeability {E}ffect and {I}nterlayer
                      {M}ass-{T}ransport in the {G}e/{S}i(111) {MBE}},
      journal      = {Materials science in semiconductor processing},
      volume       = {8},
      issn         = {1369-8001},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {PreJuSER-47656},
      pages        = {31 - 34},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {A simple analytical model of the mass-transport during the
                      initial stage of Ge wetting layer formation on Si(l 11) is
                      developed. The model considers growth of the multilevel Ge
                      islands observed in recent STM studies as evolution of
                      pyramids with two bilayer thickness. The pyramid steps flow
                      together and, as a result, the multilevel island forms if
                      there exists an upward transport of adatoms from the
                      substrate surface to the top of the pyramid. The necessary
                      condition for this is that the step at the pyramid base is
                      permeable for the adatoms (the adatoms with greater
                      probability climb up the step than incorporate into it). The
                      explicit expressions for the step permeability and
                      incorporation coefficients are obtained. It is shown that
                      decreasing step permeability is responsible for the
                      transition from multilevel growth mode to the layer-by-layer
                      formation of the wetting layer which has been observed under
                      the increasing deposition rate or/and decreasing growth
                      temperature. (C) 2004 Elsevier Ltd. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3 / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB43 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Materials
                      Science, Multidisciplinary / Physics, Applied / Physics,
                      Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000227056200007},
      doi          = {10.1016/j.mssp.2004.09.046},
      url          = {https://juser.fz-juelich.de/record/47656},
}