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000047657 0247_ $$2DOI$$a10.1016/j.susc.2005.09.039
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000047657 084__ $$2WoS$$aChemistry, Physical
000047657 084__ $$2WoS$$aPhysics, Condensed Matter
000047657 1001_ $$0P:(DE-Juel1)VDB9869$$aFilimonov, S. N.$$b0$$uFZJ
000047657 245__ $$aDislocation Networks in Conventional and Surfactant-Mediated Ge/Si(111) Epitaxy
000047657 260__ $$aAmsterdam$$bElsevier$$c2005
000047657 300__ $$a76 - 84
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000047657 520__ $$aSurface undulations induced by interfacial misfit dislocations in the Ge/Si(l 11) films grown by conventional molecular beam epitaxy and by surfactant-mediated epitaxy with Bi as a surfactant have been analyzed using scanning tunnelling microscopy and elasticity theory. A comparison of the experimentally measured undulation patterns with patterns calculated with elasticity theory leads to identification of the dislocations in both systems as 90 degrees Shockley partial dislocations. Dislocations are primarily arranged into a triangular network in Bi-mediated growth, whereas in conventional epitaxy a strongly disordered honeycomb network prevails. The dislocation density in conventional epitaxy is found to be 30% smaller than in Bi-mediated growth, which is attributed to strong Si-Ge intermixing. (c) 2005 Elsevier B.V. All rights reserved.
000047657 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
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000047657 65320 $$2Author$$ascanning tunnelling microscopy
000047657 65320 $$2Author$$amolecular beam epitaxy
000047657 65320 $$2Author$$aelasticity theory
000047657 65320 $$2Author$$astrain relaxation
000047657 65320 $$2Author$$adislocations
000047657 65320 $$2Author$$abismuth
000047657 65320 $$2Author$$asilicon
000047657 65320 $$2Author$$agermanium
000047657 7001_ $$0P:(DE-Juel1)VDB10516$$aCherepanov, V.$$b1$$uFZJ
000047657 7001_ $$0P:(DE-Juel1)VDB1226$$aPaul, N.$$b2$$uFZJ
000047657 7001_ $$0P:(DE-Juel1)VDB32659$$aAsaoka, H.$$b3$$uFZJ
000047657 7001_ $$0P:(DE-HGF)0$$aBrona, J.$$b4
000047657 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b5$$uFZJ
000047657 773__ $$0PERI:(DE-600)1479030-0$$a10.1016/j.susc.2005.09.039$$gVol. 599, p. 76 - 84$$p76 - 84$$q599<76 - 84$$tSurface science$$v599$$x0039-6028$$y2005
000047657 8567_ $$uhttp://dx.doi.org/10.1016/j.susc.2005.09.039
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000047657 9141_ $$y2005
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000047657 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
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