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@ARTICLE{Filimonov:47657,
      author       = {Filimonov, S. N. and Cherepanov, V. and Paul, N. and
                      Asaoka, H. and Brona, J. and Voigtländer, B.},
      title        = {{D}islocation {N}etworks in {C}onventional and
                      {S}urfactant-{M}ediated {G}e/{S}i(111) {E}pitaxy},
      journal      = {Surface science},
      volume       = {599},
      issn         = {0039-6028},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-47657},
      pages        = {76 - 84},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Surface undulations induced by interfacial misfit
                      dislocations in the Ge/Si(l 11) films grown by conventional
                      molecular beam epitaxy and by surfactant-mediated epitaxy
                      with Bi as a surfactant have been analyzed using scanning
                      tunnelling microscopy and elasticity theory. A comparison of
                      the experimentally measured undulation patterns with
                      patterns calculated with elasticity theory leads to
                      identification of the dislocations in both systems as 90
                      degrees Shockley partial dislocations. Dislocations are
                      primarily arranged into a triangular network in Bi-mediated
                      growth, whereas in conventional epitaxy a strongly
                      disordered honeycomb network prevails. The dislocation
                      density in conventional epitaxy is found to be $30\%$
                      smaller than in Bi-mediated growth, which is attributed to
                      strong Si-Ge intermixing. (c) 2005 Elsevier B.V. All rights
                      reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3 / CNI},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000234132600009},
      doi          = {10.1016/j.susc.2005.09.039},
      url          = {https://juser.fz-juelich.de/record/47657},
}