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000004889 0247_ $$2ISSN$$a0096-4743
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000004889 0247_ $$2ISSN$$a1945-7111
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000004889 084__ $$2WoS$$aElectrochemistry
000004889 084__ $$2WoS$$aMaterials Science, Coatings & Films
000004889 1001_ $$0P:(DE-Juel1)VDB58645$$aKim, S. K.$$b0$$uFZJ
000004889 245__ $$aLiquid injection atomic layer deposition of crystalline TiO2 thin films with a smooth morphology from Ti(O-i-Pr)2(DPM)2
000004889 260__ $$aPennington, NJ$$bElectrochemical Society$$c2009
000004889 300__ $$aD296 - D300
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000004889 440_0 $$03889$$aJournal of the Electrochemical Society$$v156$$x0013-4651$$y8
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000004889 520__ $$aTiO2 thin films were grown at susceptor temperatures from 340 to 470 degrees C by liquid injection atomic layer deposition (ALD) using Ti(O-i-Pr)(2)(DPM)(2) [Ti(OC3H7)(2)(C11H19O2)(2), titanium dipivaloylmethanato di-isopropoxide] dissolved in ethylcyclohexane as a Ti source and H2O as an oxidant. The self-saturation growth behavior of the TiO2 films was confirmed up to 390 degrees C. Within the ALD window, the growth rate of the films increased from 0.022 nm/cycle at 340 degrees C to 0.046 nm/cycle at 390 degrees C, and the films exhibited a carbon content below 3 atom %. Due to the thermal decomposition of the precursor at 470 degrees C, the growth rate of the films largely increased and the film density decreased by the increase in the carbon content of the film. The films showed quite a smooth surface morphology over the whole range of growth temperatures. The increase in the film thickness did not significantly change the surface morphology of the films due to the formation of the crystalline phase even at an initial growth stage. The relative permittivity of the TiO2 films, which were crystallized into an anatase structure, was approximately 35-40. The films grown within the ALD window showed reasonable leakage current properties.
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000004889 65320 $$2Author$$aatomic layer deposition
000004889 65320 $$2Author$$acrystal structure
000004889 65320 $$2Author$$acrystallisation
000004889 65320 $$2Author$$adielectric thin films
000004889 65320 $$2Author$$adissolving
000004889 65320 $$2Author$$aleakage currents
000004889 65320 $$2Author$$apermittivity
000004889 65320 $$2Author$$apyrolysis
000004889 65320 $$2Author$$asurface morphology
000004889 65320 $$2Author$$atitanium compounds
000004889 650_7 $$2WoSType$$aJ
000004889 7001_ $$0P:(DE-Juel1)VDB3102$$aHoffmann-Eifert, S.$$b1$$uFZJ
000004889 7001_ $$0P:(DE-Juel1)VDB5304$$aMi, S.$$b2$$uFZJ
000004889 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
000004889 773__ $$0PERI:(DE-600)2002179-3$$a10.1149/1.3138722$$gVol. 156, p. D296 - D300$$pD296 - D300$$q156<D296 - D300$$tJournal of the Electrochemical Society$$v156$$x0013-4651$$y2009
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000004889 9141_ $$y2009
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000004889 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x0
000004889 9201_ $$0I:(DE-Juel1)VDB788$$d31.12.2010$$gIFF$$kIFF-8$$lMikrostrukturforschung$$x1
000004889 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x2
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