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@ARTICLE{Kim:4889,
      author       = {Kim, S. K. and Hoffmann-Eifert, S. and Mi, S. and Waser,
                      R.},
      title        = {{L}iquid injection atomic layer deposition of crystalline
                      {T}i{O}2 thin films with a smooth morphology from
                      {T}i({O}-i-{P}r)2({DPM})2},
      journal      = {Journal of the Electrochemical Society},
      volume       = {156},
      issn         = {0013-4651},
      address      = {Pennington, NJ},
      publisher    = {Electrochemical Society},
      reportid     = {PreJuSER-4889},
      pages        = {D296 - D300},
      year         = {2009},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {TiO2 thin films were grown at susceptor temperatures from
                      340 to 470 degrees C by liquid injection atomic layer
                      deposition (ALD) using Ti(O-i-Pr)(2)(DPM)(2)
                      [Ti(OC3H7)(2)(C11H19O2)(2), titanium dipivaloylmethanato
                      di-isopropoxide] dissolved in ethylcyclohexane as a Ti
                      source and H2O as an oxidant. The self-saturation growth
                      behavior of the TiO2 films was confirmed up to 390 degrees
                      C. Within the ALD window, the growth rate of the films
                      increased from 0.022 nm/cycle at 340 degrees C to 0.046
                      nm/cycle at 390 degrees C, and the films exhibited a carbon
                      content below 3 atom $\%.$ Due to the thermal decomposition
                      of the precursor at 470 degrees C, the growth rate of the
                      films largely increased and the film density decreased by
                      the increase in the carbon content of the film. The films
                      showed quite a smooth surface morphology over the whole
                      range of growth temperatures. The increase in the film
                      thickness did not significantly change the surface
                      morphology of the films due to the formation of the
                      crystalline phase even at an initial growth stage. The
                      relative permittivity of the TiO2 films, which were
                      crystallized into an anatase structure, was approximately
                      35-40. The films grown within the ALD window showed
                      reasonable leakage current properties.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / IFF-8 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB788 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000267798500041},
      doi          = {10.1149/1.3138722},
      url          = {https://juser.fz-juelich.de/record/4889},
}