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000049632 1001_ $$0P:(DE-Juel1)VDB44581$$aMontanari, Simone$$b0$$eCorresponding author$$gfemale$$uFZJ
000049632 245__ $$aFabrication and characterization of planar Gunn diodes for Monolithic Microwave Integrated Circuits
000049632 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2005
000049632 300__ $$aIII, 150 S.
000049632 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis
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000049632 4900_ $$0PERI:(DE-600)2725212-7$$823176$$aSchriften des Forschungszentrums Jülich. Reihe Informationstechnik / Information Technology$$v9
000049632 502__ $$aRWTH Aachen, Diss., 2005$$bDr. (FH)$$cRWTH Aachen$$d2005
000049632 500__ $$aRecord converted from VDB: 12.11.2012
000049632 520__ $$aIn the present dissertation, GaAs and GaN Gunn diodes have been investigated with respect to microwave generation in the field of automotive intelligent radar systems. High quality planar Gunn diodes have been fabricated with two different hot electron injectors: a graded gap injector (GGI) and a novel resonant tunneling injector (RTI). Within the framework of the cooperation project between Forschungzentrum Jülich and Robert Bosch GmbH, GGI GaAs Gunn diodes have been studied and optimized. RF evaluation of their performance up to 110 GHz shows the effectiveness of different graded gap injectors. An estimation of the possible operational modes is given for diodes used as microwave generators at 77 GHz, with application in automotive radar systems. A second hot electron injector, the GaAs/AlAs double barrier resonant tunnelling injector has been proposed and designed. GaAs Gunn diodes with RTI have been successfully fabricated and characterized. RTI Gunn diodes present clear evidence of the injector effectiveness both in DC and RF conditions. The design, processing and characterization of a novel GaAs Gunn diode based VCOMMIC$^{1}$ fulfilled the second objective of this work. A simple and straightforward processing technology makes the proposed microwave generator competitive with cavity oscillators and transistor based MMICs.
000049632 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
000049632 655_7 $$aHochschulschrift$$xDissertation (FH)
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000049632 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x1
000049632 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x2$$z381
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