TY  - THES
AU  - Montanari, Simone
TI  - Fabrication and characterization of planar Gunn diodes for Monolithic Microwave Integrated Circuits
VL  - 9
PB  - RWTH Aachen
VL  - Dr. (FH)
CY  - Jülich
M1  - PreJuSER-49632
SN  - 3-89336-396-3
T2  - Schriften des Forschungszentrums Jülich. Reihe Informationstechnik / Information Technology
SP  - III, 150 S.
PY  - 2005
N1  - Record converted from VDB: 12.11.2012
N1  - RWTH Aachen, Diss., 2005
AB  - In the present dissertation, GaAs and GaN Gunn diodes have been investigated with respect to microwave generation in the field of automotive intelligent radar systems. High quality planar Gunn diodes have been fabricated with two different hot electron injectors: a graded gap injector (GGI) and a novel resonant tunneling injector (RTI). Within the framework of the cooperation project between Forschungzentrum Jülich and Robert Bosch GmbH, GGI GaAs Gunn diodes have been studied and optimized. RF evaluation of their performance up to 110 GHz shows the effectiveness of different graded gap injectors. An estimation of the possible operational modes is given for diodes used as microwave generators at 77 GHz, with application in automotive radar systems. A second hot electron injector, the GaAs/AlAs double barrier resonant tunnelling injector has been proposed and designed. GaAs Gunn diodes with RTI have been successfully fabricated and characterized. RTI Gunn diodes present clear evidence of the injector effectiveness both in DC and RF conditions. The design, processing and characterization of a novel GaAs Gunn diode based VCOMMIC$^{1}$ fulfilled the second objective of this work. A simple and straightforward processing technology makes the proposed microwave generator competitive with cavity oscillators and transistor based MMICs.
LB  - PUB:(DE-HGF)11 ; PUB:(DE-HGF)3
UR  - https://juser.fz-juelich.de/record/49632
ER  -