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@PHDTHESIS{Montanari:49632,
      author       = {Montanari, Simone},
      title        = {{F}abrication and characterization of planar {G}unn diodes
                      for {M}onolithic {M}icrowave {I}ntegrated {C}ircuits},
      volume       = {9},
      school       = {RWTH Aachen},
      type         = {Dr. (FH)},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {PreJuSER-49632},
      isbn         = {3-89336-396-3},
      series       = {Schriften des Forschungszentrums Jülich. Reihe
                      Informationstechnik / Information Technology},
      pages        = {III, 150 S.},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012; RWTH Aachen, Diss.,
                      2005},
      abstract     = {In the present dissertation, GaAs and GaN Gunn diodes have
                      been investigated with respect to microwave generation in
                      the field of automotive intelligent radar systems. High
                      quality planar Gunn diodes have been fabricated with two
                      different hot electron injectors: a graded gap injector
                      (GGI) and a novel resonant tunneling injector (RTI). Within
                      the framework of the cooperation project between
                      Forschungzentrum Jülich and Robert Bosch GmbH, GGI GaAs
                      Gunn diodes have been studied and optimized. RF evaluation
                      of their performance up to 110 GHz shows the effectiveness
                      of different graded gap injectors. An estimation of the
                      possible operational modes is given for diodes used as
                      microwave generators at 77 GHz, with application in
                      automotive radar systems. A second hot electron injector,
                      the GaAs/AlAs double barrier resonant tunnelling injector
                      has been proposed and designed. GaAs Gunn diodes with RTI
                      have been successfully fabricated and characterized. RTI
                      Gunn diodes present clear evidence of the injector
                      effectiveness both in DC and RF conditions. The design,
                      processing and characterization of a novel GaAs Gunn diode
                      based VCOMMIC$^{1}$ fulfilled the second objective of this
                      work. A simple and straightforward processing technology
                      makes the proposed microwave generator competitive with
                      cavity oscillators and transistor based MMICs.},
      cin          = {ISG-1 / CNI},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB41 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      typ          = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/49632},
}