Hauptseite > Publikationsdatenbank > Fabrication and characterization of planar Gunn diodes for Monolithic Microwave Integrated Circuits > print

001     49632
005     20210430100659.0
020 _ _ |a 3-89336-396-3
024 7 _ |2 Handle
|a 2128/424
024 7 _ |2 URI
|a 424
024 7 _ |2 ISSN
|a 1433-5514
037 _ _ |a PreJuSER-49632
041 _ _ |a English
082 _ _ |a 620
100 1 _ |0 P:(DE-Juel1)VDB44581
|a Montanari, Simone
|b 0
|e Corresponding author
|g female
|u FZJ
245 _ _ |a Fabrication and characterization of planar Gunn diodes for Monolithic Microwave Integrated Circuits
260 _ _ |a Jülich
|b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
|c 2005
300 _ _ |a III, 150 S.
336 7 _ |0 PUB:(DE-HGF)11
|2 PUB:(DE-HGF)
|a Dissertation / PhD Thesis
336 7 _ |0 PUB:(DE-HGF)3
|2 PUB:(DE-HGF)
|a Book
336 7 _ |0 2
|2 EndNote
|a Thesis
336 7 _ |2 DRIVER
|a doctoralThesis
336 7 _ |2 BibTeX
|a PHDTHESIS
336 7 _ |2 DataCite
|a Output Types/Dissertation
336 7 _ |2 ORCID
|a DISSERTATION
490 0 _ |0 PERI:(DE-600)2725212-7
|8 23176
|a Schriften des Forschungszentrums Jülich. Reihe Informationstechnik / Information Technology
|v 9
500 _ _ |a Record converted from VDB: 12.11.2012
502 _ _ |a RWTH Aachen, Diss., 2005
|b Dr. (FH)
|c RWTH Aachen
|d 2005
520 _ _ |a In the present dissertation, GaAs and GaN Gunn diodes have been investigated with respect to microwave generation in the field of automotive intelligent radar systems. High quality planar Gunn diodes have been fabricated with two different hot electron injectors: a graded gap injector (GGI) and a novel resonant tunneling injector (RTI). Within the framework of the cooperation project between Forschungzentrum Jülich and Robert Bosch GmbH, GGI GaAs Gunn diodes have been studied and optimized. RF evaluation of their performance up to 110 GHz shows the effectiveness of different graded gap injectors. An estimation of the possible operational modes is given for diodes used as microwave generators at 77 GHz, with application in automotive radar systems. A second hot electron injector, the GaAs/AlAs double barrier resonant tunnelling injector has been proposed and designed. GaAs Gunn diodes with RTI have been successfully fabricated and characterized. RTI Gunn diodes present clear evidence of the injector effectiveness both in DC and RF conditions. The design, processing and characterization of a novel GaAs Gunn diode based VCOMMIC$^{1}$ fulfilled the second objective of this work. A simple and straightforward processing technology makes the proposed microwave generator competitive with cavity oscillators and transistor based MMICs.
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|2 G:(DE-HGF)
|a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|x 0
655 _ 7 |a Hochschulschrift
|x Dissertation (FH)
856 4 _ |u https://juser.fz-juelich.de/record/49632/files/Informationstech_9.pdf
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:49632
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913 1 _ |0 G:(DE-Juel1)FUEK252
|b Information
|k I01
|l Informationstechnologie mit nanoelektronischen Systemen
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|x 0
914 1 _ |y 2005
915 _ _ |0 StatID:(DE-HGF)0510
|2 StatID
|a OpenAccess
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)VDB41
|d 31.12.2006
|g ISG
|k ISG-1
|l Institut für Halbleiterschichten und Bauelemente
|x 1
920 1 _ |0 I:(DE-Juel1)VDB381
|d 14.09.2008
|g CNI
|k CNI
|l Center of Nanoelectronic Systems for Information Technology
|x 2
|z 381
970 _ _ |a VDB:(DE-Juel1)77643
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980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a I:(DE-Juel1)VDB381
980 _ _ |a UNRESTRICTED
980 _ _ |a FullTexts
980 1 _ |a FullTexts
981 _ _ |a I:(DE-Juel1)PGI-9-20110106
981 _ _ |a I:(DE-Juel1)VDB381

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