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001     49700
005     20200423204301.0
024 7 _ |a 10.1149/1.2008940
|2 DOI
024 7 _ |a WOS:000231390900030
|2 WOS
024 7 _ |a 1099-0062
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024 7 _ |a 1944-8775
|2 ISSN
024 7 _ |a 2128/2884
|2 Handle
037 _ _ |a PreJuSER-49700
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Electrochemistry
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
100 1 _ |a Meyer, R.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB5958
245 _ _ |a Nonlinear electrical properties of grain boundaries in oxygen ion conductors - Modeling the varistor behavior
260 _ _ |a Pennington, NJ
|b Soc.
|c 2005
300 _ _ |a E67
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
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336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
|2 DRIVER
440 _ 0 |a Electrochemical and Solid State Letters
|x 1099-0062
|0 13562
|y 10
|v 8
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We report on numerical simulations of the grain-boundary varistor behavior recently observed in Y2O3-doped CeO2 of high purity. The aim of this study is to disclose the nature of the nonlinear electrical properties of the grain boundaries in oxygen ion conductors. Under small voltages (< 25 mV), the simulation shows a linear current-voltage relation dominated by the grain-boundary resistance. Under intermediate voltages (25-200 mV), the simulation discloses a grain-boundary resistance breakdown and a nonlinear current-voltage relation. The increase of ionic charge carriers in the grain-boundary space-charge layer is the cause for the nonlinear behavior. Calculations are compared to experimental results. (c) 2005 The Electrochemical Society.
536 _ _ |a Kondensierte Materie
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588 _ _ |a Dataset connected to Web of Science, Pubmed
650 _ 7 |a J
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700 1 _ |a Guo, X.
|b 1
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700 1 _ |a Waser, R.
|b 2
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|0 P:(DE-Juel1)131022
773 _ _ |a 10.1149/1.2008940
|g Vol. 8, p. E67
|p E67
|q 8|0 PERI:(DE-600)1483551-4
|t Electrochemical and solid-state letters
|v 8
|y 2005
|x 1099-0062
856 4 _ |u https://juser.fz-juelich.de/record/49700/files/77739.pdf
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913 1 _ |k M02
|v Kondensierte Materie
|l Kondensierte Materie
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914 1 _ |y 2005
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
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920 1 _ |k IFF-IEM
|l Elektronische Materialien
|d 31.12.2006
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970 _ _ |a VDB:(DE-Juel1)77739
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