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@ARTICLE{Choi:49727,
      author       = {Choi, B. J. and Jeong, D. S. and Kim, S. K. and Rohde, C.
                      and Choi, S. and Oh, J. H. and Kim, H. J. and Hwang, C. S.
                      and Waser, R. and Reichenberg, B. and Tiedke, S.},
      title        = {{R}esistive switching mechanism of {T}i{O}2 thin films
                      grown by atomic-layer deposition},
      journal      = {Journal of applied physics},
      volume       = {98},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-49727},
      pages        = {33715},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The resistive switching mechanism of 20- to 57-nm-thick
                      TiO2 thin films grown by atomic-layer deposition was studied
                      by current-voltage measurements and conductive atomic force
                      microscopy. Electric pulse-induced resistance switching was
                      repetitively (> a few hundred times) observed with a
                      resistance ratio > 10(2). Both the low- and high-resistance
                      states showed linear log current versus log voltage graphs
                      with a slope of 1 in the low-voltage region where switching
                      did not occur. The thermal stability of both conduction
                      states was also studied. Atomic force microscopy studies
                      under atmosphere and high-vacuum conditions showed that
                      resistance switching is closely related to the formation and
                      elimination of conducting spots. The conducting spots of the
                      low-resistance state have a few tens times higher
                      conductivity than those of the high-resistance state and
                      their density is also a few tens times higher which results
                      in a similar to 10(3) times larger overall conductivity. An
                      interesting finding was that the area where the conducting
                      spots do not exist shows a few times different resistance
                      between the low- and high-resistance state films. It is
                      believed that this resistance change is due to the
                      difference in point defect density that was generated by the
                      applied bias field. The point defects possibly align to form
                      tiny conducting filaments in the high-resistance state and
                      these tiny conducting filaments gather together to form
                      stronger and more conducting filaments during the transition
                      to the low-resistance state. (c) 2005 American Institute of
                      Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000231246100059},
      doi          = {10.1063/1.2001146},
      url          = {https://juser.fz-juelich.de/record/49727},
}