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@ARTICLE{Halder:49729,
      author       = {Halder, S. and Schneller, T. and Meyer, R. and Waser, R.},
      title        = {{E}ffect of ozone treatment on the electrical properties of
                      ({B}a0.7{S}r0.3){T}i{O}3 thin films},
      journal      = {Journal of applied physics},
      volume       = {97},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-49729},
      pages        = {114904},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Thin films of (BaxSr1-x)TiO3 were deposited on Pt-coated Si
                      substrates by chemical solution deposition. The films were
                      postannealed under ozone atmosphere at various temperatures.
                      Although there was no change observed in the microstructure
                      after the anneal in ozone, the dielectric dispersion and the
                      loss tangents were reduced for the films. It was also
                      noticed that the leakage current reduced by almost two
                      orders of magnitude after treatment with ozone. The ozone
                      treatment was done at various temperatures between 250 and
                      450 degrees C to find an optimum temperature with regard to
                      the electrical properties. Films postannealed in ozone at
                      350 degrees C for 30 min showed a leakage reduction by
                      almost three orders of magnitude. The leakage dependence on
                      ozone postannealing is discussed on the basis of an
                      interface-dominated (Schottky injection) and a
                      bulk-dominated (point defect approach) charge transport
                      process as the two limiting conduction mechanisms across
                      thin films. (C) 2005 American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK242},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000229804700135},
      doi          = {10.1063/1.1927289},
      url          = {https://juser.fz-juelich.de/record/49729},
}