Home > Publications database > Effect of ozone treatment on the electrical properties of (Ba0.7Sr0.3)TiO3 thin films > print

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017 _ _ |a This version is available at the following Publisher URL: http://jap.aip.org
024 7 _ |a 10.1063/1.1927289
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024 7 _ |a 2128/1016
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041 _ _ |a eng
082 _ _ |a 530
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|a Physics, Applied
100 1 _ |a Halder, S.
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245 _ _ |a Effect of ozone treatment on the electrical properties of (Ba0.7Sr0.3)TiO3 thin films
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2005
300 _ _ |a 114904
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Journal of Applied Physics
|x 0021-8979
|0 3051
|v 97
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Thin films of (BaxSr1-x)TiO3 were deposited on Pt-coated Si substrates by chemical solution deposition. The films were postannealed under ozone atmosphere at various temperatures. Although there was no change observed in the microstructure after the anneal in ozone, the dielectric dispersion and the loss tangents were reduced for the films. It was also noticed that the leakage current reduced by almost two orders of magnitude after treatment with ozone. The ozone treatment was done at various temperatures between 250 and 450 degrees C to find an optimum temperature with regard to the electrical properties. Films postannealed in ozone at 350 degrees C for 30 min showed a leakage reduction by almost three orders of magnitude. The leakage dependence on ozone postannealing is discussed on the basis of an interface-dominated (Schottky injection) and a bulk-dominated (point defect approach) charge transport process as the two limiting conduction mechanisms across thin films. (C) 2005 American Institute of Physics.
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700 1 _ |a Schneller, T.
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700 1 _ |a Meyer, R.
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700 1 _ |a Waser, R.
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773 _ _ |a 10.1063/1.1927289
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856 7 _ |u http://dx.doi.org/10.1063/1.1927289
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