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000049730 0247_ $$2DOI$$a10.1103/PhysRevB.72.125341
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000049730 084__ $$2WoS$$aPhysics, Condensed Matter
000049730 1001_ $$0P:(DE-Juel1)VDB3107$$aKohlstedt, H.$$b0$$uFZJ
000049730 245__ $$aTheoretical current-voltage characteristics of ferroelectric tunnel junctions
000049730 260__ $$aCollege Park, Md.$$bAPS$$c2005
000049730 300__ $$a125341
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000049730 520__ $$aWe present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that the direct electron tunneling represents the dominant conduction mechanism. First, the influence of converse piezoelectric effect inherent in ferroelectric materials on the tunnel current is described. The calculations show that the lattice strains of piezoelectric origin modify the current-voltage relationship owing to strain-induced changes of the barrier thickness, electron effective mass, and position of the conduction-band edge. Remarkably, the conductance minimum becomes shifted from zero voltage due to the piezoelectric effect, and a strain-related resistive switching takes place after the polarization reversal in a ferroelectric barrier. Second, we analyze the influence of an internal electric field arising due to imperfect screening of polarization charges by electrons in metal electrodes. It is shown that, for asymmetric FTJs, this depolarizing-field effect also leads to a considerable change of the barrier resistance after the polarization reversal. However, the symmetry of the resulting current-voltage loop is different from that characteristic of the strain-related resistive switching. The crossover from one to another type of the hysteretic curve, which accompanies the increase of FTJ asymmetry, is described taking into account both the strain and depolarizing-field effects. It is noted that asymmetric FTJs with dissimilar top and bottom electrodes are preferable for the nonvolatile memory applications because of a larger resistance on/off ratio.
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000049730 7001_ $$0P:(DE-Juel1)VDB3050$$aPertsev, N. A.$$b1$$uFZJ
000049730 7001_ $$0P:(DE-Juel1)VDB58659$$aContreras, J. R.$$b2$$uFZJ
000049730 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
000049730 77318 $$2Crossref$$3journal-article$$a10.1103/physrevb.72.125341$$bAmerican Physical Society (APS)$$d2005-09-29$$n12$$p125341$$tPhysical Review B$$v72$$x1098-0121$$y2005
000049730 773__ $$0PERI:(DE-600)2844160-6$$a10.1103/PhysRevB.72.125341$$gVol. 72, p. 125341$$n12$$p125341$$q72<125341$$tPhysical review / B$$v72$$x1098-0121$$y2005
000049730 8567_ $$uhttp://hdl.handle.net/2128/1017$$uhttp://dx.doi.org/10.1103/PhysRevB.72.125341
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