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@ARTICLE{Kohlstedt:49730,
      author       = {Kohlstedt, H. and Pertsev, N. A. and Contreras, J. R. and
                      Waser, R.},
      title        = {{T}heoretical current-voltage characteristics of
                      ferroelectric tunnel junctions},
      journal      = {Physical review / B},
      volume       = {72},
      number       = {12},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {PreJuSER-49730},
      pages        = {125341},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We present the concept of ferroelectric tunnel junctions
                      (FTJs). These junctions consist of two metal electrodes
                      separated by a nanometer-thick ferroelectric barrier. The
                      current-voltage characteristics of FTJs are analyzed under
                      the assumption that the direct electron tunneling represents
                      the dominant conduction mechanism. First, the influence of
                      converse piezoelectric effect inherent in ferroelectric
                      materials on the tunnel current is described. The
                      calculations show that the lattice strains of piezoelectric
                      origin modify the current-voltage relationship owing to
                      strain-induced changes of the barrier thickness, electron
                      effective mass, and position of the conduction-band edge.
                      Remarkably, the conductance minimum becomes shifted from
                      zero voltage due to the piezoelectric effect, and a
                      strain-related resistive switching takes place after the
                      polarization reversal in a ferroelectric barrier. Second, we
                      analyze the influence of an internal electric field arising
                      due to imperfect screening of polarization charges by
                      electrons in metal electrodes. It is shown that, for
                      asymmetric FTJs, this depolarizing-field effect also leads
                      to a considerable change of the barrier resistance after the
                      polarization reversal. However, the symmetry of the
                      resulting current-voltage loop is different from that
                      characteristic of the strain-related resistive switching.
                      The crossover from one to another type of the hysteretic
                      curve, which accompanies the increase of FTJ asymmetry, is
                      described taking into account both the strain and
                      depolarizing-field effects. It is noted that asymmetric FTJs
                      with dissimilar top and bottom electrodes are preferable for
                      the nonvolatile memory applications because of a larger
                      resistance on/off ratio.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000232229400107},
      doi          = {10.1103/PhysRevB.72.125341},
      url          = {https://juser.fz-juelich.de/record/49730},
}