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| 001 | 49730 | ||
| 005 | 20230426083059.0 | ||
| 017 | _ | _ | |a This version is available at the following Publisher URL: http://prb.aps.org |
| 024 | 7 | _ | |a 10.1103/PhysRevB.72.125341 |2 DOI |
| 024 | 7 | _ | |a WOS:000232229400107 |2 WOS |
| 024 | 7 | _ | |a 2128/1017 |2 Handle |
| 037 | _ | _ | |a PreJuSER-49730 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Kohlstedt, H. |b 0 |u FZJ |0 P:(DE-Juel1)VDB3107 |
| 245 | _ | _ | |a Theoretical current-voltage characteristics of ferroelectric tunnel junctions |
| 260 | _ | _ | |a College Park, Md. |b APS |c 2005 |
| 300 | _ | _ | |a 125341 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Physical Review B |x 1098-0121 |0 4919 |v 72 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that the direct electron tunneling represents the dominant conduction mechanism. First, the influence of converse piezoelectric effect inherent in ferroelectric materials on the tunnel current is described. The calculations show that the lattice strains of piezoelectric origin modify the current-voltage relationship owing to strain-induced changes of the barrier thickness, electron effective mass, and position of the conduction-band edge. Remarkably, the conductance minimum becomes shifted from zero voltage due to the piezoelectric effect, and a strain-related resistive switching takes place after the polarization reversal in a ferroelectric barrier. Second, we analyze the influence of an internal electric field arising due to imperfect screening of polarization charges by electrons in metal electrodes. It is shown that, for asymmetric FTJs, this depolarizing-field effect also leads to a considerable change of the barrier resistance after the polarization reversal. However, the symmetry of the resulting current-voltage loop is different from that characteristic of the strain-related resistive switching. The crossover from one to another type of the hysteretic curve, which accompanies the increase of FTJ asymmetry, is described taking into account both the strain and depolarizing-field effects. It is noted that asymmetric FTJs with dissimilar top and bottom electrodes are preferable for the nonvolatile memory applications because of a larger resistance on/off ratio. |
| 536 | _ | _ | |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK252 |x 0 |
| 542 | _ | _ | |i 2005-09-29 |2 Crossref |u http://link.aps.org/licenses/aps-default-license |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 700 | 1 | _ | |a Pertsev, N. A. |b 1 |u FZJ |0 P:(DE-Juel1)VDB3050 |
| 700 | 1 | _ | |a Contreras, J. R. |b 2 |u FZJ |0 P:(DE-Juel1)VDB58659 |
| 700 | 1 | _ | |a Waser, R. |b 3 |u FZJ |0 P:(DE-Juel1)131022 |
| 773 | 1 | 8 | |a 10.1103/physrevb.72.125341 |b American Physical Society (APS) |d 2005-09-29 |n 12 |p 125341 |3 journal-article |2 Crossref |t Physical Review B |v 72 |y 2005 |x 1098-0121 |
| 773 | _ | _ | |a 10.1103/PhysRevB.72.125341 |g Vol. 72, p. 125341 |p 125341 |n 12 |q 72<125341 |0 PERI:(DE-600)2844160-6 |t Physical review / B |v 72 |y 2005 |x 1098-0121 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1103/PhysRevB.72.125341 |u http://hdl.handle.net/2128/1017 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/49730/files/77779.pdf |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/49730/files/77779.jpg?subformat=icon-1440 |x icon-1440 |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/49730/files/77779.jpg?subformat=icon-180 |x icon-180 |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/49730/files/77779.jpg?subformat=icon-640 |x icon-640 |y OpenAccess |
| 909 | C | O | |o oai:juser.fz-juelich.de:49730 |p openaire |p open_access |p driver |p VDB |p dnbdelivery |
| 913 | 1 | _ | |k I01 |v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |l Informationstechnologie mit nanoelektronischen Systemen |b Information |0 G:(DE-Juel1)FUEK252 |x 0 |
| 914 | 1 | _ | |y 2005 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 915 | _ | _ | |2 StatID |0 StatID:(DE-HGF)0510 |a OpenAccess |
| 920 | 1 | _ | |k IFF-IEM |l Elektronische Materialien |d 31.12.2006 |g IFF |0 I:(DE-Juel1)VDB321 |x 0 |
| 920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)77779 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a JUWEL |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)VDB381 |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a FullTexts |
| 980 | 1 | _ | |a FullTexts |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB381 |
| 999 | C | 5 | |a 10.1103/PhysRev.36.1604 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 A. Sommerfeld |y 1933 |2 Crossref |t Handbuch der Physik |o A. Sommerfeld Handbuch der Physik 1933 |
| 999 | C | 5 | |a 10.1007/BF01340420 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 C. B. Duke |y 1969 |2 Crossref |t Solid State Physics |o C. B. Duke Solid State Physics 1969 |
| 999 | C | 5 | |y 1969 |2 Crossref |t Tunneling Phenomena in Solids |o Tunneling Phenomena in Solids 1969 |
| 999 | C | 5 | |1 E. L. Wolf |y 1985 |2 Crossref |t Principles of Tunneling Spectroscopy |o E. L. Wolf Principles of Tunneling Spectroscopy 1985 |
| 999 | C | 5 | |a 10.1109/77.80745 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 J.-M. Slaughter |y 2003 |2 Crossref |t Nanoelectronics and Information Technology, Advanced Electronic Materials and Novel Devices |o J.-M. Slaughter Nanoelectronics and Information Technology, Advanced Electronic Materials and Novel Devices 2003 |
| 999 | C | 5 | |a 10.1103/PhysRevB.54.R8357 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.118651 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 J. Z. Sun |y 1998 |2 Crossref |o J. Z. Sun 1998 |
| 999 | C | 5 | |a 10.1103/PhysRevB.61.R14905 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevLett.85.5182 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 J. Valasek |y 1920 |2 Crossref |o J. Valasek 1920 |
| 999 | C | 5 | |1 L. Esaki |y 1971 |2 Crossref |o L. Esaki 1971 |
| 999 | C | 5 | |1 L. L. Chang |y 1971 |2 Crossref |o L. L. Chang 1971 |
| 999 | C | 5 | |a 10.1080/10584589808202046 |9 -- missing cx lookup -- |1 J. Scott |p 1 - |2 Crossref |t Ferroelectr. Rev. |v 1 |y 1998 |
| 999 | C | 5 | |a 10.1063/1.122374 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.57.R5563 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1339207 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 H. Kohlstedt |y 2002 |2 Crossref |t Ferroelectric Thin Films X |o H. Kohlstedt Ferroelectric Thin Films X 2002 |
| 999 | C | 5 | |a 10.1063/1.1582366 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1627944 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1016/0038-1098(72)91180-5 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevLett.30.384 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.124536 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevLett.89.067601 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1126/science.1098252 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.126469 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.63.205426 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1427406 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1038/nature01501 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1126/science.1092508 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1038/36069 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevLett.84.175 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.357693 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 G. L. Bir |y 1974 |2 Crossref |t Symmetry and Strain Induced Effects in Semiconductors |o G. L. Bir Symmetry and Strain Induced Effects in Semiconductors 1974 |
| 999 | C | 5 | |a 10.1007/978-3-7091-9495-9 |1 V. L. Bonch-Bruevich |2 Crossref |9 -- missing cx lookup -- |y 1982 |
| 999 | C | 5 | |a 10.1063/1.1702682 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1659141 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.115263 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.57.15303 |9 -- missing cx lookup -- |1 M. Kumagai |p 15 - |2 Crossref |t Phys. Rev. B |v 57 |y 1998 |
| 999 | C | 5 | |a 10.1134/1.1356136 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 F. Jona |y 1962 |2 Crossref |t Ferroelectric Crystals |o F. Jona Ferroelectric Crystals 1962 |
| 999 | C | 5 | |a 10.1080/00150199608230247 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1007/978-3-662-04307-3 |1 J. F. Scott |2 Crossref |9 -- missing cx lookup -- |y 2000 |
| 999 | C | 5 | |a 10.1063/1.1621731 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRev.80.1082 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1080/00150199208015605 |9 -- missing cx lookup -- |1 D. R. Tilley |p 313 - |2 Crossref |t Ferroelectrics |v 134 |y 1992 |
| 999 | C | 5 | |a 10.1103/PhysRevB.59.11257 |9 -- missing cx lookup -- |1 Y. Watanabe |p 11 - |2 Crossref |t Phys. Rev. B |v 59 |y 1999 |
| 999 | C | 5 | |a 10.1063/1.1434542 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1080/10584589508012276 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1313275 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1435067 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1729774 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1109/16.753713 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.357589 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.123539 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.371404 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevLett.80.1988 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1016/S0022-0248(02)01985-1 |9 -- missing cx lookup -- |2 Crossref |
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