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000049731 084__ $$2WoS$$aPhysics, Applied
000049731 1001_ $$0P:(DE-Juel1)VDB5958$$aMeyer, R.$$b0$$uFZJ
000049731 245__ $$aDynamic leakage current compensation in ferroelectric thin-film capacitor structures
000049731 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2005
000049731 300__ $$a142907
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000049731 440_0 $$0562$$aApplied Physics Letters$$v86$$x0003-6951
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000049731 520__ $$aWe report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures. The ac current response is determined for two adjacent frequencies. Taking advantage of the different frequency dependencies of the ferroelectric switching current, dielectric displacement current and ohmic current, the hysteresis loop is calculated without performing a static leakage current measurement, which causes a high dc field stress to the sample. The applicability of the proposed measurement procedure is demonstrated on a Pt/Pb(Zr,Ti)O-3/IrO2 ferroelectric capacitor revealing a high leakage current. (C) 2005 American Institute of Physics.
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000049731 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b1$$uFZJ
000049731 7001_ $$0P:(DE-HGF)0$$aPrume, K.$$b2
000049731 7001_ $$0P:(DE-HGF)0$$aSchmitz, T.$$b3
000049731 7001_ $$0P:(DE-HGF)0$$aTiedke, S.$$b4
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000049731 8567_ $$uhttp://hdl.handle.net/2128/1018$$uhttp://dx.doi.org/10.1063/1.1897425
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