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001     49731
005     20200423204301.0
017 _ _ |a This version is available at the following Publisher URL: http://apl.aip.org
024 7 _ |a 10.1063/1.1897425
|2 DOI
024 7 _ |a WOS:000228242700044
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024 7 _ |a 2128/1018
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037 _ _ |a PreJuSER-49731
041 _ _ |a eng
082 _ _ |a 530
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|a Physics, Applied
100 1 _ |a Meyer, R.
|b 0
|u FZJ
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245 _ _ |a Dynamic leakage current compensation in ferroelectric thin-film capacitor structures
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2005
300 _ _ |a 142907
336 7 _ |a Journal Article
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336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 86
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures. The ac current response is determined for two adjacent frequencies. Taking advantage of the different frequency dependencies of the ferroelectric switching current, dielectric displacement current and ohmic current, the hysteresis loop is calculated without performing a static leakage current measurement, which causes a high dc field stress to the sample. The applicability of the proposed measurement procedure is demonstrated on a Pt/Pb(Zr,Ti)O-3/IrO2 ferroelectric capacitor revealing a high leakage current. (C) 2005 American Institute of Physics.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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588 _ _ |a Dataset connected to Web of Science
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700 1 _ |a Waser, R.
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700 1 _ |a Prume, K.
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700 1 _ |a Schmitz, T.
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700 1 _ |a Tiedke, S.
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773 _ _ |a 10.1063/1.1897425
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|t Applied physics letters
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856 7 _ |u http://dx.doi.org/10.1063/1.1897425
|u http://hdl.handle.net/2128/1018
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