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@ARTICLE{Nagarajan:49734,
      author       = {Nagarajan, V. and Jia, C. L. and Kohlstedt, H. and Waser,
                      R. and Misirlioglu, I. B. and Alpay, S. P. and Ramesh, R.},
      title        = {{M}isfit dislocations in nanoscale ferroelectric
                      heterostructures},
      journal      = {Applied physics letters},
      volume       = {86},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-49734},
      pages        = {192910},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We present a quantitative study of the thickness dependence
                      of the polarization and piezoelectric properties in
                      epitaxial (001) PbZr0.52Ti0.48O3 films grown on (001)
                      SrRuO3-buffered (001) SrTiO3 substrates. High-resolution
                      transmission electron microscopy reveals that even the
                      thinnest films (similar to 8 nm) are fully relaxed with a
                      dislocation density close to 10(12) cm(-2) and a spacing of
                      approximately 12 nm. Quantitative piezoelectric and
                      ferroelectric measurements show a drastic degradation in the
                      out-of-plane piezoelectric constant (d(33)) and the switched
                      polarization (DP) as a function of decreasing thickness. In
                      contrast, lattice-matched ultrathin PbZr0.2Ti0.8O3 films
                      that have a very low dislocation density show superior
                      ferroelectric properties. Supporting theoretical
                      calculations show that the variations in the strain field
                      around the core of the dislocation leads to highly localized
                      polarization gradients and hence strong depolarizing fields,
                      which result in suppression of ferroelectricity in the
                      vicinity of a dislocation. (c) 2005 American Institute of
                      Physics.},
      keywords     = {J (WoSType)},
      cin          = {CNI / IFF-IEM / IFF-IMF},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB321 /
                      I:(DE-Juel1)VDB37},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000229397900073},
      doi          = {10.1063/1.1922579},
      url          = {https://juser.fz-juelich.de/record/49734},
}