001     49734
005     20240610120556.0
017 _ _ |a This version is available at the following Publisher URL: http://apl.aip.org
024 7 _ |a 10.1063/1.1922579
|2 DOI
024 7 _ |a WOS:000229397900073
|2 WOS
024 7 _ |a 2128/1096
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024 7 _ |a altmetric:11785498
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037 _ _ |a PreJuSER-49734
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Nagarajan, V.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Misfit dislocations in nanoscale ferroelectric heterostructures
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2005
300 _ _ |a 192910
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 86
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We present a quantitative study of the thickness dependence of the polarization and piezoelectric properties in epitaxial (001) PbZr0.52Ti0.48O3 films grown on (001) SrRuO3-buffered (001) SrTiO3 substrates. High-resolution transmission electron microscopy reveals that even the thinnest films (similar to 8 nm) are fully relaxed with a dislocation density close to 10(12) cm(-2) and a spacing of approximately 12 nm. Quantitative piezoelectric and ferroelectric measurements show a drastic degradation in the out-of-plane piezoelectric constant (d(33)) and the switched polarization (DP) as a function of decreasing thickness. In contrast, lattice-matched ultrathin PbZr0.2Ti0.8O3 films that have a very low dislocation density show superior ferroelectric properties. Supporting theoretical calculations show that the variations in the strain field around the core of the dislocation leads to highly localized polarization gradients and hence strong depolarizing fields, which result in suppression of ferroelectricity in the vicinity of a dislocation. (c) 2005 American Institute of Physics.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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700 1 _ |a Jia, C. L.
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700 1 _ |a Kohlstedt, H.
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700 1 _ |a Waser, R.
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700 1 _ |a Misirlioglu, I. B.
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700 1 _ |a Alpay, S. P.
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700 1 _ |a Ramesh, R.
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773 _ _ |a 10.1063/1.1922579
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|t Applied physics letters
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|y 2005
|x 0003-6951
856 7 _ |u http://dx.doi.org/10.1063/1.1922579
|u http://hdl.handle.net/2128/1096
856 4 _ |u https://juser.fz-juelich.de/record/49734/files/77783.pdf
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