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@ARTICLE{Meyer:49737,
      author       = {Meyer, R. and Waser, R.},
      title        = {{R}esistive donor-doped {S}r{T}i{O}3 sensors: {I}, basic
                      model for a fast sensor response},
      journal      = {Sensors and actuators / B},
      volume       = {101},
      issn         = {0925-4005},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {PreJuSER-49737},
      pages        = {335},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {In contrast to dense donor-doped SrTiO3 (STO) ceramics and
                      single crystals, porous fine grained thick films reveal a
                      surprisingly fast resistivity response in reply to a change
                      of the oxygen partial pressure (pO(2)) within some 10 ms
                      even at temperatures below 900 degreesC. Although this
                      unexpected behavior was attributed to a grain boundary
                      effect, the resistivity versus PO2 plot shows a similar
                      characteristic as found for dense ceramics or single
                      crystals, respectively. This observation suggests that
                      cation vacancies, which significantly influence the
                      electrical behavior of the bulk, but which are known to
                      equilibrate only at highest temperatures, may also play a
                      key role in the formation of resistive grain boundaries in
                      the moderate temperature range. For mobility reasons, a
                      change in the cation vacancy concentration might then be
                      limited to a few monolayers on each side of the interface
                      and a very high interface density of defect states is needed
                      to explain the drastic resistivity change of the sensor
                      observed in the experiment. We propose a generalized point
                      defect model that involves the formation of a near-interface
                      space charge region. The latter is found to affect the local
                      defect equilibria significantly. As a consequence, the
                      concentration of each defect type differs from the bulk
                      value. The fast sensor response might then originate from a
                      space charge induced increase of the cation vacancy
                      concentration situated only near the interface that exceeds
                      the value predicted from electroneutral defect
                      considerations by 2 orders of magnitude. The local formation
                      of cation vacancies causes a strong depletion of electrons.
                      The space charge itself is formed due to the difference in
                      mobilities of ionic and electronic species. (C) 2004
                      Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Chemistry, Analytical / Electrochemistry / Instruments $\&$
                      Instrumentation},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000222435100010},
      doi          = {10.1016/j.snb.2004.04.004},
      url          = {https://juser.fz-juelich.de/record/49737},
}