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001     49740
005     20200423204302.0
017 _ _ |a This version is available at the following Publisher URL: http://apl.aip.org
024 7 _ |a 10.1063/1.1775880
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024 7 _ |a WOS:000222855400038
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024 7 _ |a 2128/1022
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037 _ _ |a PreJuSER-49740
041 _ _ |a eng
082 _ _ |a 530
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|a Physics, Applied
100 1 _ |a Tappe, S.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Electrostrictive resonances in (Ba0.7Sr0.3)TiO3 thin films at microwave frequencies
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2004
300 _ _ |a 624
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 85
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The bias-voltage-dependent permittivity of (Ba0.7Sr0.3)TiO3 (BST) thin films with thicknesses ranging from 100 to 250 nm is investigated in the frequency range from 500 MHz to 40 GHz by impedance spectroscopy of integrated BST capacitors. The dielectric spectra of the films exhibit resonance phenomena in the 4-7 GHz range when a bias field is applied. It is shown that the main controlling parameter of the resonance frequency is the film thickness. Calculations based on the strong electrostrictive activity of the BST films underline the assumption that the emission of plane acoustic waves is the underlying mechanism for this behavior. (C) 2004 American Institute of Physics.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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700 1 _ |a Bottger, U.
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700 1 _ |a Waser, R.
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773 _ _ |a 10.1063/1.1775880
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856 7 _ |u http://dx.doi.org/10.1063/1.1775880
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