% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Ellerkmann:49741,
      author       = {Ellerkmann, U. and Schorn, P. and Bolten, D. and Boettger,
                      U. and Waser, R. and Bruchhaus, R. and Yamakawa, K.},
      title        = {{I}nfluence of asymmetric oxide electrode structures on the
                      interface capacity and the failure mechanisms in {PZT} thin
                      films},
      journal      = {Integrated ferroelectrics},
      volume       = {52},
      issn         = {1058-4587},
      address      = {London [u.a.]},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {PreJuSER-49741},
      pages        = {63},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The influence of symmetric and asymmetric electrodes
                      including SRO and IrO2 within the electrode structure on the
                      imprint and fatigue behavior in sputtered and CSD derived
                      PbZrxTi1-xO2 (PZT) thin films is investigated. It is found
                      that SRO buffer layers are needed within top and bottom
                      electrode to improve the fatigue behavior. However, for
                      improvement of the imprint behavior, only one SRO buffer
                      layer within either top or bottom electrode is sufficient,
                      whereas IrO2 reveals no improvement of the imprint behavior.
                      Furthermore the direction dependence of the imprint behavior
                      is examined. To examine the influence of the interface
                      capacity on the fatigue mechanism in more detail, the
                      capacity is measured for different PZT film thicknesses
                      during fatigue treatment. It is shown that there is hardly
                      any difference in interface capacity during fatigue.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000187624400008},
      doi          = {10.1080/10584580390254123},
      url          = {https://juser.fz-juelich.de/record/49741},
}