Home > Publications database > Diffusion mechanism of hydrogen through PECVD SiNx:H for a fast defect passivation of mc-Si solar cells > print

001     49826
005     20240708133630.0
037 _ _ |a PreJuSER-49826
100 1 _ |a Dekkers, H. F. W.
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245 _ _ |a Diffusion mechanism of hydrogen through PECVD SiNx:H for a fast defect passivation of mc-Si solar cells
260 _ _ |c 2005
295 1 0 |a Proceedings of the 20th European Photovoltaic Solar Energy Conference and Exhibition, 6-10 June, Barcelona, Spain. - 2005. - S. 721
336 7 _ |a Contribution to a conference proceedings
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336 7 _ |a Contribution to a book
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336 7 _ |a Conference Paper
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336 7 _ |a INPROCEEDINGS
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500 _ _ |a Record converted from VDB: 12.11.2012
500 _ _ |3 Conference proceedings / Book
536 _ _ |a Photovoltaik
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700 1 _ |a Carnel, L.
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700 1 _ |a Beaucarne, G.
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700 1 _ |a Beyer, W.
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914 1 _ |a Proceedings
|y 2005
920 1 _ |k IPV
|l Institut für Photovoltaik
|d 31.12.2006
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981 _ _ |a I:(DE-Juel1)IEK-5-20101013

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