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@ARTICLE{He:49884,
      author       = {He, J. Q. and Jia, C. L. and Vaithyanathan, V. and Schlom,
                      D. G. and Schubert, J. and Gerber, A. and Kohlstedt, H. H.
                      and Wang, R. H.},
      title        = {{I}nterfacial reaction in the growth of epitaxial
                      {S}r{T}i{O}3 thin films on (001) {S}i substrates},
      journal      = {Journal of applied physics},
      volume       = {97},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-49884},
      pages        = {104921},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The SrTiO3/Si interface was investigated by transmission
                      electron microscopy for SrTiO3 films grown on (001) Si by
                      molecular-beam epitaxy with different native oxide (SiO2)
                      removal treatments, and Sr/Ti flux ratios. The interface and
                      film microstructure were independent of the process used to
                      remove the native oxide, but the interface reactivity was
                      dependent on the Sr/Ti flux ratio. A low Sr/Ti flux ratio
                      (similar to 0.8) resulted not only in a layer of amorphous
                      material at the film/substrate interface but also in the
                      formation of crystalline C49 TiSi2 precipitates at that
                      interface. These results are consistent with thermodynamic
                      expectations in which it is paramount to maintain separation
                      between TiO2 and the underlying silicon. (c) 2005 American
                      Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {ISG-1 / CNI / IFF-IMF / IFF-IEM},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB41 / I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB37
                      / I:(DE-Juel1)VDB321},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000230168100183},
      doi          = {10.1063/1.1915519},
      url          = {https://juser.fz-juelich.de/record/49884},
}