001     50025
005     20180211163726.0
024 7 _ |2 DOI
|a 10.1038/nmat1539
024 7 _ |2 WOS
|a WOS:000234379000017
037 _ _ |a PreJuSER-50025
041 _ _ |a eng
082 _ _ |a 610
084 _ _ |2 WoS
|a Chemistry, Physical
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Welnic, W.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Unravelling the interplay of local structure and physical properties in phase-change materials
260 _ _ |a Basingstoke
|b Nature Publishing Group
|c 2006
300 _ _ |a 56
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Nature Materials
|x 1476-1122
|0 11903
|v 5
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a As the chemical bonds in a covalent semiconductor are independent of long-range order, semiconductors generally have similar local arrangements not only in the crystalline, but also in the amorphous phase. In contrast, the compound Ge2Sb2Te5, which is a prototype phase-change material used in optical and electronic data storage, has been shown to undergo a profound change in local order on amorphization. In this work, ab initio ground state calculations are used to unravel the origin of the local order in the crystalline cubic and the amorphous phase of GeSbTe alloys and the resulting physical properties. Our study shows that this class of materials is characterized by two competing structures with similar energy but different local order and different physical properties. We explain both the local distortions found in the crystalline phase and the occurrence of octahedral and tetrahedral coordination in the amorphous state. Although the atomic rearrangement is most pronounced for the Ge atoms, the strongest change of the electronic states affects the Te states close to the Fermi energy, resulting in a pronounced change of electronic properties such as an increased energy gap.
536 _ _ |a Kondensierte Materie
|c P54
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK414
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
700 1 _ |a Pamungkas, A.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Detemple, R.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Steimer, Ch.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Blügel, S.
|b 4
|u FZJ
|0 P:(DE-Juel1)130548
700 1 _ |a Wuttig, M.
|b 5
|0 P:(DE-HGF)0
773 _ _ |a 10.1038/nmat1539
|g Vol. 5, p. 56
|p 56
|q 5<56
|0 PERI:(DE-600)2088679-2
|t Nature materials
|v 5
|y 2006
|x 1476-1122
856 7 _ |u http://dx.doi.org/10.1038/nmat1539
909 C O |o oai:juser.fz-juelich.de:50025
|p VDB
913 1 _ |k P54
|v Kondensierte Materie
|l Kondensierte Materie
|b Materie
|z entfällt bis 2009
|0 G:(DE-Juel1)FUEK414
|x 0
914 1 _ |y 2006
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k IFF-TH-I
|l Theorie I
|d 31.12.2006
|g IFF
|0 I:(DE-Juel1)VDB30
|x 0
920 1 _ |k JARA-SIM
|l Jülich-Aachen Research Alliance - Simulation Sciences
|g JARA
|0 I:(DE-Juel1)VDB1045
|x 1
970 _ _ |a VDB:(DE-Juel1)78221
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-1-20110106
980 _ _ |a I:(DE-Juel1)VDB1045
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-1-20110106
981 _ _ |a I:(DE-Juel1)VDB1045


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21