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000050224 084__ $$2WoS$$aEngineering, Electrical & Electronic
000050224 084__ $$2WoS$$aPhysics, Applied
000050224 1001_ $$0P:(DE-HGF)0$$aGirgis, E.$$b0
000050224 245__ $$aTunnel magnetoresistance devices processed by oxidation in air and UV assisted oxidation in oxygen
000050224 260__ $$c2000
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000050224 440_0 $$02508$$aIEEE Transactions on Electron Devices$$v47$$x0018-9383
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000050224 520__ $$aTunnel magnetoresistance (TMR) devices were processed by sputter deposition of Co, Al and NiFe on oxidized Si wafers. After the Al deposition, an ex-situ oxidation in air at room temperature or an in-situ oxidation enhanced by ultraviolet (UV) irradiation in high purity oxygen at 100 mbar follows. The electrical and magnetic properties of the junctions are measured and discussed concerning specific junction resistance, magnetoresistance ratio, long time stability of the junctions, and failure rate of the processes. Some microscopic experiments provided consistent information of the tunnel barrier. MR ratios between 15% and 20% were measured for the different oxidation processes.
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000050224 65320 $$2Author$$aAl oxidation enhanced by UV irradiation
000050224 65320 $$2Author$$aferromagnetic films
000050224 65320 $$2Author$$amagnetoresistance
000050224 65320 $$2Author$$aMRAM
000050224 65320 $$2Author$$atunnel junction
000050224 65320 $$2Author$$aTMR
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000050224 7001_ $$0P:(DE-Juel1)VDB2184$$aSchelten, J.$$b1$$uFZJ
000050224 7001_ $$0P:(DE-Juel1)VDB10459$$aGrünberg, P. A.$$b2$$uFZJ
000050224 7001_ $$0P:(DE-HGF)0$$aRottländer, P.$$b3
000050224 7001_ $$0P:(DE-Juel1)VDB3107$$aKohlstedt, H.$$b4$$uFZJ
000050224 773__ $$0PERI:(DE-600)2028088-9$$gVol. 47, p. 697$$p697$$q47<697$$tIEEE Transactions on Electron Devices$$v47$$x0018-9383$$y2000
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