TY  - JOUR
AU  - Girgis, E.
AU  - Schelten, J.
AU  - Grünberg, P. A.
AU  - Rottländer, P.
AU  - Kohlstedt, H.
TI  - Tunnel magnetoresistance devices processed by oxidation in air and UV assisted oxidation in oxygen
JO  - IEEE Transactions on Electron Devices
VL  - 47
SN  - 0018-9383
M1  - PreJuSER-50224
SP  - 697
PY  - 2000
N1  - Record converted from VDB: 12.11.2012
AB  - Tunnel magnetoresistance (TMR) devices were processed by sputter deposition of Co, Al and NiFe on oxidized Si wafers. After the Al deposition, an ex-situ oxidation in air at room temperature or an in-situ oxidation enhanced by ultraviolet (UV) irradiation in high purity oxygen at 100 mbar follows. The electrical and magnetic properties of the junctions are measured and discussed concerning specific junction resistance, magnetoresistance ratio, long time stability of the junctions, and failure rate of the processes. Some microscopic experiments provided consistent information of the tunnel barrier. MR ratios between 15% and 20% were measured for the different oxidation processes.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000086356600006
UR  - https://juser.fz-juelich.de/record/50224
ER  -