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@ARTICLE{Girgis:50224,
author = {Girgis, E. and Schelten, J. and Grünberg, P. A. and
Rottländer, P. and Kohlstedt, H.},
title = {{T}unnel magnetoresistance devices processed by oxidation
in air and {UV} assisted oxidation in oxygen},
journal = {IEEE Transactions on Electron Devices},
volume = {47},
issn = {0018-9383},
reportid = {PreJuSER-50224},
pages = {697},
year = {2000},
note = {Record converted from VDB: 12.11.2012},
abstract = {Tunnel magnetoresistance (TMR) devices were processed by
sputter deposition of Co, Al and NiFe on oxidized Si wafers.
After the Al deposition, an ex-situ oxidation in air at room
temperature or an in-situ oxidation enhanced by ultraviolet
(UV) irradiation in high purity oxygen at 100 mbar follows.
The electrical and magnetic properties of the junctions are
measured and discussed concerning specific junction
resistance, magnetoresistance ratio, long time stability of
the junctions, and failure rate of the processes. Some
microscopic experiments provided consistent information of
the tunnel barrier. MR ratios between $15\%$ and $20\%$ were
measured for the different oxidation processes.},
keywords = {J (WoSType)},
cin = {ISI},
cid = {I:(DE-Juel1)ISI-20090406},
pnm = {Ionen- und Lithographietechnik},
pid = {G:(DE-Juel1)FUEK66},
shelfmark = {Engineering, Electrical $\&$ Electronic / Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000086356600006},
url = {https://juser.fz-juelich.de/record/50224},
}