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@ARTICLE{Girgis:50224,
      author       = {Girgis, E. and Schelten, J. and Grünberg, P. A. and
                      Rottländer, P. and Kohlstedt, H.},
      title        = {{T}unnel magnetoresistance devices processed by oxidation
                      in air and {UV} assisted oxidation in oxygen},
      journal      = {IEEE Transactions on Electron Devices},
      volume       = {47},
      issn         = {0018-9383},
      reportid     = {PreJuSER-50224},
      pages        = {697},
      year         = {2000},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Tunnel magnetoresistance (TMR) devices were processed by
                      sputter deposition of Co, Al and NiFe on oxidized Si wafers.
                      After the Al deposition, an ex-situ oxidation in air at room
                      temperature or an in-situ oxidation enhanced by ultraviolet
                      (UV) irradiation in high purity oxygen at 100 mbar follows.
                      The electrical and magnetic properties of the junctions are
                      measured and discussed concerning specific junction
                      resistance, magnetoresistance ratio, long time stability of
                      the junctions, and failure rate of the processes. Some
                      microscopic experiments provided consistent information of
                      the tunnel barrier. MR ratios between $15\%$ and $20\%$ were
                      measured for the different oxidation processes.},
      keywords     = {J (WoSType)},
      cin          = {ISI},
      cid          = {I:(DE-Juel1)ISI-20090406},
      pnm          = {Ionen- und Lithographietechnik},
      pid          = {G:(DE-Juel1)FUEK66},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000086356600006},
      url          = {https://juser.fz-juelich.de/record/50224},
}