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001     50224
005     20200423204308.0
017 _ _ |a This version is available at the following Publisher URL: http://ieeexplore.ieee.org/Xplore/dynhome.jsp
024 7 _ |2 WOS
|a WOS:000086356600006
024 7 _ |2 Handle
|a 2128/2335
037 _ _ |a PreJuSER-50224
041 _ _ |a eng
084 _ _ |2 WoS
|a Engineering, Electrical & Electronic
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Girgis, E.
|0 P:(DE-HGF)0
|b 0
245 _ _ |a Tunnel magnetoresistance devices processed by oxidation in air and UV assisted oxidation in oxygen
260 _ _ |c 2000
300 _ _ |a 697
336 7 _ |0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
|a Journal Article
336 7 _ |2 DataCite
|a Output Types/Journal article
336 7 _ |0 0
|2 EndNote
|a Journal Article
336 7 _ |2 BibTeX
|a ARTICLE
336 7 _ |2 ORCID
|a JOURNAL_ARTICLE
336 7 _ |2 DRIVER
|a article
440 _ 0 |0 2508
|a IEEE Transactions on Electron Devices
|v 47
|x 0018-9383
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Tunnel magnetoresistance (TMR) devices were processed by sputter deposition of Co, Al and NiFe on oxidized Si wafers. After the Al deposition, an ex-situ oxidation in air at room temperature or an in-situ oxidation enhanced by ultraviolet (UV) irradiation in high purity oxygen at 100 mbar follows. The electrical and magnetic properties of the junctions are measured and discussed concerning specific junction resistance, magnetoresistance ratio, long time stability of the junctions, and failure rate of the processes. Some microscopic experiments provided consistent information of the tunnel barrier. MR ratios between 15% and 20% were measured for the different oxidation processes.
536 _ _ |0 G:(DE-Juel1)FUEK66
|2 G:(DE-HGF)
|a Ionen- und Lithographietechnik
|c 29.86.0
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |2 WoSType
|a J
653 2 0 |2 Author
|a Al oxidation enhanced by UV irradiation
653 2 0 |2 Author
|a ferromagnetic films
653 2 0 |2 Author
|a magnetoresistance
653 2 0 |2 Author
|a MRAM
653 2 0 |2 Author
|a tunnel junction
653 2 0 |2 Author
|a TMR
700 1 _ |a Schelten, J.
|0 P:(DE-Juel1)VDB2184
|b 1
|u FZJ
700 1 _ |a Grünberg, P. A.
|0 P:(DE-Juel1)VDB10459
|b 2
|u FZJ
700 1 _ |a Rottländer, P.
|0 P:(DE-HGF)0
|b 3
700 1 _ |a Kohlstedt, H.
|0 P:(DE-Juel1)VDB3107
|b 4
|u FZJ
773 _ _ |0 PERI:(DE-600)2028088-9
|g Vol. 47, p. 697
|p 697
|q 47<697
|t IEEE Transactions on Electron Devices
|v 47
|x 0018-9383
|y 2000
856 4 _ |u https://juser.fz-juelich.de/record/50224/files/7845.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/50224/files/7845.jpg?subformat=icon-1440
|x icon-1440
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/50224/files/7845.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/50224/files/7845.jpg?subformat=icon-640
|x icon-640
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:50224
|p openaire
|p open_access
|p VDB
|p driver
|p dnbdelivery
913 1 _ |0 G:(DE-Juel1)FUEK66
|b Informationstechnik
|k 29.86.0
|l Grundlagenforschung zur Informationstechnik
|v Ionen- und Lithographietechnik
|x 0
914 1 _ |y 2000
915 _ _ |0 StatID:(DE-HGF)0510
|2 StatID
|a OpenAccess
920 1 _ |0 I:(DE-Juel1)ISI-20090406
|d 31.12.2000
|g ISI
|k ISI
|l Institut für Schicht- und Ionentechnik
|x 0
970 _ _ |a VDB:(DE-Juel1)7845
980 _ _ |a VDB
980 _ _ |a JUWEL
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)ISI-20090406
980 _ _ |a UNRESTRICTED
980 _ _ |a FullTexts
980 1 _ |a FullTexts

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