Hauptseite > Publikationsdatenbank > Fabrication and Characterisation of AlGaN/GaN High Electron Mobility Transistors for Power Applications > RIS |
TY - THES AU - Bernát, J. TI - Fabrication and Characterisation of AlGaN/GaN High Electron Mobility Transistors for Power Applications PB - Techn. Hochsch. Aachen VL - Dr. (FH) CY - Jülich M1 - PreJuSER-50334 PY - 2005 N1 - Record converted from VDB: 12.11.2012 N1 - Aachen, Techn. Hochsch., Diss., 2005 LB - PUB:(DE-HGF)11 UR - https://juser.fz-juelich.de/record/50334 ER -