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000050425 084__ $$2WoS$$aEngineering, Electrical & Electronic
000050425 084__ $$2WoS$$aPhysics, Applied
000050425 084__ $$2WoS$$aPhysics, Condensed Matter
000050425 1001_ $$0P:(DE-Juel1)VDB34838$$aPuchalla, J.$$b0$$uFZJ
000050425 245__ $$aMOCVD growth of (Pb, Ba) (Zr, Ti) O3 thin films for memory applications
000050425 260__ $$aLondon [u.a.]$$bTaylor & Francis$$c2005
000050425 300__ $$a225 - 233
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000050425 440_0 $$02659$$aIntegrated Ferroelectrics$$v75$$x1058-4587
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000050425 520__ $$aWe are reporting on the modification of Pb(Zr,Ti)O 3 (PZT) thin films by substitution of Ba for Pb. The (Pb,Ba)(Ti,Zr)O 3 (PBZT) films are grown on iridium coated silicon substrates by a liquid delivery MOCVD technique. Four separate solutions of Pb (DPM) 2 , Ba (DPM) 2 , Ti (O i Pr) 2 (DPM) 2 , and a new zirconium precursor Zr (IBPM) 4 were used. A PZT(30/70) film of 150 nm thickness shows a P r value of 35 mu C/cm 2 , and E c of 90.4 kV/cm. Ba substitution leads to suppressed tendency for phase separation, more homogeneous surface morphology, smaller grain sizes and easier growth with respect to adjustment of stoichiometry. PBZT films show low dielectric losses of 0.03 and high permittivity values of up to 1000. A decrease of the coercive field could not be observed.
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000050425 7001_ $$0P:(DE-Juel1)VDB3102$$aHoffmann-Eifert, S.$$b1$$uFZJ
000050425 7001_ $$0P:(DE-HGF)0$$aCattaneo, L.$$b2
000050425 7001_ $$0P:(DE-HGF)0$$aCarella, S.$$b3
000050425 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4$$uFZJ
000050425 773__ $$0PERI:(DE-600)2037916-X$$a10.1080/10584580500428341$$gVol. 75, p. 225 - 233$$p225 - 233$$q75<225 - 233$$tIntegrated ferroelectrics$$v75$$x1058-4587$$y2005
000050425 8567_ $$uhttp://dx.doi.org/10.1080/10584580500428341
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000050425 9141_ $$y2005
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000050425 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x0
000050425 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
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