TY  - JOUR
AU  - Puchalla, J.
AU  - Hoffmann-Eifert, S.
AU  - Cattaneo, L.
AU  - Carella, S.
AU  - Waser, R.
TI  - MOCVD growth of (Pb, Ba) (Zr, Ti) O3 thin films for memory applications
JO  - Integrated ferroelectrics
VL  - 75
SN  - 1058-4587
CY  - London [u.a.]
PB  - Taylor & Francis
M1  - PreJuSER-50425
SP  - 225 - 233
PY  - 2005
N1  - Record converted from VDB: 12.11.2012
AB  - We are reporting on the modification of Pb(Zr,Ti)O 3 (PZT) thin films by substitution of Ba for Pb. The (Pb,Ba)(Ti,Zr)O 3 (PBZT) films are grown on iridium coated silicon substrates by a liquid delivery MOCVD technique. Four separate solutions of Pb (DPM) 2 , Ba (DPM) 2 , Ti (O i Pr) 2 (DPM) 2 , and a new zirconium precursor Zr (IBPM) 4 were used. A PZT(30/70) film of 150 nm thickness shows a P r value of 35 mu C/cm 2 , and E c of 90.4 kV/cm. Ba substitution leads to suppressed tendency for phase separation, more homogeneous surface morphology, smaller grain sizes and easier growth with respect to adjustment of stoichiometry. PBZT films show low dielectric losses of 0.03 and high permittivity values of up to 1000. A decrease of the coercive field could not be observed.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000234232100026
DO  - DOI:10.1080/10584580500428341
UR  - https://juser.fz-juelich.de/record/50425
ER  -