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@ARTICLE{Puchalla:50425,
      author       = {Puchalla, J. and Hoffmann-Eifert, S. and Cattaneo, L. and
                      Carella, S. and Waser, R.},
      title        = {{MOCVD} growth of ({P}b, {B}a) ({Z}r, {T}i) {O}3 thin films
                      for memory applications},
      journal      = {Integrated ferroelectrics},
      volume       = {75},
      issn         = {1058-4587},
      address      = {London [u.a.]},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {PreJuSER-50425},
      pages        = {225 - 233},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We are reporting on the modification of Pb(Zr,Ti)O 3 (PZT)
                      thin films by substitution of Ba for Pb. The (Pb,Ba)(Ti,Zr)O
                      3 (PBZT) films are grown on iridium coated silicon
                      substrates by a liquid delivery MOCVD technique. Four
                      separate solutions of Pb (DPM) 2 , Ba (DPM) 2 , Ti (O i Pr)
                      2 (DPM) 2 , and a new zirconium precursor Zr (IBPM) 4 were
                      used. A PZT(30/70) film of 150 nm thickness shows a P r
                      value of 35 mu C/cm 2 , and E c of 90.4 kV/cm. Ba
                      substitution leads to suppressed tendency for phase
                      separation, more homogeneous surface morphology, smaller
                      grain sizes and easier growth with respect to adjustment of
                      stoichiometry. PBZT films show low dielectric losses of 0.03
                      and high permittivity values of up to 1000. A decrease of
                      the coercive field could not be observed.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000234232100026},
      doi          = {10.1080/10584580500428341},
      url          = {https://juser.fz-juelich.de/record/50425},
}