%0 Journal Article
%A Oligschlaeger, R.
%A Waser, R.
%A Meyer, R.
%A Karthäuser, S.
%A Dittmann, R.
%T Resistive switching and data reliability of epitaxial (Ba,SR)TiO3 thin films
%J Applied physics letters
%V 88
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-50488
%P 042901
%D 2006
%Z Record converted from VDB: 12.11.2012
%X We report on resistive switching of capacitor-like SrRuO3/Ba0.7Sr0.3TiO3/Pt thin films epitaxially grown on SrTiO3 substrates. We observe a weak but stable hysteresis in the current-voltage curve. By applying short voltage pulses, a high or low resistive state as well as intermediate states can be addressed even at room temperature. We demonstrate a multiple-branch hysteresis curve corresponding to multilevel switching modus revealing different subloops for different write voltages. Furthermore reliability issues such as cycling endurance and data retention are presented. Read-write operations over 10 000 cycles show a fatigue-like drift of both resistance states. No data loss is found upon continuous readout.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000234968600067
%R 10.1063/1.2162860
%U https://juser.fz-juelich.de/record/50488