TY  - JOUR
AU  - Oligschlaeger, R.
AU  - Waser, R.
AU  - Meyer, R.
AU  - Karthäuser, S.
AU  - Dittmann, R.
TI  - Resistive switching and data reliability of epitaxial (Ba,SR)TiO3 thin films
JO  - Applied physics letters
VL  - 88
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-50488
SP  - 042901
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - We report on resistive switching of capacitor-like SrRuO3/Ba0.7Sr0.3TiO3/Pt thin films epitaxially grown on SrTiO3 substrates. We observe a weak but stable hysteresis in the current-voltage curve. By applying short voltage pulses, a high or low resistive state as well as intermediate states can be addressed even at room temperature. We demonstrate a multiple-branch hysteresis curve corresponding to multilevel switching modus revealing different subloops for different write voltages. Furthermore reliability issues such as cycling endurance and data retention are presented. Read-write operations over 10 000 cycles show a fatigue-like drift of both resistance states. No data loss is found upon continuous readout.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000234968600067
DO  - DOI:10.1063/1.2162860
UR  - https://juser.fz-juelich.de/record/50488
ER  -