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@ARTICLE{Oligschlaeger:50488,
author = {Oligschlaeger, R. and Waser, R. and Meyer, R. and
Karthäuser, S. and Dittmann, R.},
title = {{R}esistive switching and data reliability of epitaxial
({B}a,{SR}){T}i{O}3 thin films},
journal = {Applied physics letters},
volume = {88},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-50488},
pages = {042901},
year = {2006},
note = {Record converted from VDB: 12.11.2012},
abstract = {We report on resistive switching of capacitor-like
SrRuO3/Ba0.7Sr0.3TiO3/Pt thin films epitaxially grown on
SrTiO3 substrates. We observe a weak but stable hysteresis
in the current-voltage curve. By applying short voltage
pulses, a high or low resistive state as well as
intermediate states can be addressed even at room
temperature. We demonstrate a multiple-branch hysteresis
curve corresponding to multilevel switching modus revealing
different subloops for different write voltages. Furthermore
reliability issues such as cycling endurance and data
retention are presented. Read-write operations over 10 000
cycles show a fatigue-like drift of both resistance states.
No data loss is found upon continuous readout.},
keywords = {J (WoSType)},
cin = {IFF-IEM / CNI / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381 /
$I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000234968600067},
doi = {10.1063/1.2162860},
url = {https://juser.fz-juelich.de/record/50488},
}