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001     50488
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017 _ _ |a This version is available at the following Publisher URL: http://apl.aip.org
024 7 _ |a 10.1063/1.2162860
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024 7 _ |a WOS:000234968600067
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024 7 _ |a 2128/1023
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041 _ _ |a eng
082 _ _ |a 530
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|a Physics, Applied
100 1 _ |a Oligschlaeger, R.
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245 _ _ |a Resistive switching and data reliability of epitaxial (Ba,SR)TiO3 thin films
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2006
300 _ _ |a 042901
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 88
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We report on resistive switching of capacitor-like SrRuO3/Ba0.7Sr0.3TiO3/Pt thin films epitaxially grown on SrTiO3 substrates. We observe a weak but stable hysteresis in the current-voltage curve. By applying short voltage pulses, a high or low resistive state as well as intermediate states can be addressed even at room temperature. We demonstrate a multiple-branch hysteresis curve corresponding to multilevel switching modus revealing different subloops for different write voltages. Furthermore reliability issues such as cycling endurance and data retention are presented. Read-write operations over 10 000 cycles show a fatigue-like drift of both resistance states. No data loss is found upon continuous readout.
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700 1 _ |a Waser, R.
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700 1 _ |a Meyer, R.
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700 1 _ |a Karthäuser, S.
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700 1 _ |a Dittmann, R.
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773 _ _ |a 10.1063/1.2162860
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856 7 _ |u http://dx.doi.org/10.1063/1.2162860
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