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000050489 084__ $$2WoS$$aPhysics, Applied
000050489 1001_ $$0P:(DE-HGF)0$$aSchorn, J.$$b0
000050489 245__ $$aMonte Carlo simulations of imprint behavior in ferroelectrics
000050489 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2005
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000050489 440_0 $$0562$$aApplied Physics Letters$$v87$$x0003-6951
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000050489 520__ $$aIn this letter, Monte Carlo simulation methods were used to investigate the influence of the defect orientation and concentration on the hysteresis loop in ferroelectric thin films. The hysteresis loops were calculated by an existing Monte Carlo model. For a certain type of defect orientation, the simulations revealed an asymmetric hysteresis loop behavior, similar to hysteresis curves recorded by imprint measurements. Though these results may not directly offer a new explanation for the imprint mechanism in ferroelectric thin films, they still provide insight information about the often observed phenomenon of imprinted hysteresis loops of as-prepared thin-film capacitors.
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000050489 7001_ $$0P:(DE-HGF)0$$aBöttger, U.$$b1
000050489 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b2$$uFZJ
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